Inventor · disambiguated record
Naoki Koido
Also filed as: KOIDO NAOKI
9 granted patents·3 pending applications·331 citations·filing 1998–2006
91Inventor score
Files withTOSHIBA KK11
Top patents by PatentIndex Score
12 records- 0197US6222225B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Apr 24, 2001·176 cites·9 claims
- 0285US6413809B2Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trenchTOSHIBA KK·Filed 2001·Granted Jul 2, 2002·27 cites·4 claims
- 0383US6462373B2Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layerTOSHIBA KK·Filed 2000·Granted Oct 8, 2002·27 cites·13 claims
- 0482US6828627B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·23 cites·19 claims
- 0581US6703669B1Semiconductor device having serially connected memory cell transistors provided between two current terminalsTOSHIBA KK·Filed 2000·Granted Mar 9, 2004·23 cites·18 claims
- 0676US6639296B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Oct 28, 2003·13 cites·11 claims
- 0772US6274434B1Method of making memory cell with shallow trench isolationTOSHIBA KK·Filed 1999·Granted Aug 14, 2001·22 cites·27 claims
- 0869US7064375B2Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jun 20, 2006·13 cites·30 claims
- 0965US6828648B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·7 cites·44 claims
- 1045US2006170064A1Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereofTOSHIBA KK·Filed 2006·Application pending·0 cites
- 1140US2005073008A1Semiconductor deviceTOSHIBA KK·Filed 2004·Application pending·0 cites
- 1228US2001014530A1Method for manufacturing a semiconductor deviceFiled 1998·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Naoki Koido files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →