Inventor · disambiguated record
Yeon-Cheol Heo
Also filed as: HEO YEON-CHEOL
12 granted patents·2 pending applications·61 citations·filing 1997–2020
88Inventor score
Top patents by PatentIndex Score
14 records- 0190US10020396B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 10, 2018·7 cites·15 claims
- 0286US10204834B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 12, 2019·4 cites·14 claims
- 0381US9576955B2Semiconductor device having strained channel layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 21, 2017·4 cites·15 claims
- 0472US10622258B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 14, 2020·1 cites·19 claims
- 0567US10361319B2Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 23, 2019·1 cites·20 claims
- 0666US11127640B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 21, 2021·0 cites·19 claims
- 0764US10937700B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 2, 2021·1 cites·4 claims
- 0863US10276564B2Semiconductor device including vertical channelSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·18 claims
- 0960US5926733AMetal layer patterns of a semiconductor device and a method for forming the sameHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jul 20, 1999·26 cites·6 claims
- 1055US10461187B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·18 claims
- 1153US6218232B1Method for fabricating DRAM deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Apr 17, 2001·16 cites·13 claims
- 1249US9978881B2Integrated circuit devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 1333US2002160564A1Semiconductor device having conductive layer within field oxide layer and method for forming the sameFiled 2000·Application pending·0 cites
- 1432US2001015465A1Method for forming a transistor for a semiconductior deviceFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →