Inventor · disambiguated record
Dinesh Chopra
Also filed as: CHOPRA DINESH
81 granted patents·13 pending applications·3,093 citations·filing 1998–2014
99Inventor score
Top patents by PatentIndex Score
94 records- 0199US6361411B1Method for conditioning polishing surfaceMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 26, 2002·88 cites·7 claims
- 0298US6551935B1Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 22, 2003·147 cites·151 claims
- 0398US6250994B1Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing padsMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 26, 2001·243 cites·4 claims
- 0498US6206756B1Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive padMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 27, 2001·273 cites·48 claims
- 0598US6196899B1Polishing apparatusMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 6, 2001·160 cites·10 claims
- 0698US6039633AMethod and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assembliesMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 21, 2000·319 cites·81 claims
- 0797US6313038B1Method and apparatus for controlling chemical interactions during planarization of microelectronic substratesMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 6, 2001·116 cites·66 claims
- 0897US6276996B1Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive padMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 21, 2001·239 cites·9 claims
- 0996US7335935B2Semiconductor structuresMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 26, 2008·32 cites·15 claims
- 1096US6602117B1Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 5, 2003·82 cites·76 claims
- 1196US6579799B2Method and apparatus for controlling chemical interactions during planarization of microelectronic substratesMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 17, 2003·93 cites·55 claims
- 1296US6548407B1Method and apparatus for controlling chemical interactions during planarization of microelectronic substratesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 15, 2003·93 cites·84 claims
- 1396US6328632B1Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assembliesMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 11, 2001·166 cites·43 claims
- 1496US6273786B1Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive padMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 14, 2001·206 cites·19 claims
- 1595US6354919B2Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assembliesMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 12, 2002·66 cites·16 claims
- 1694US6511912B1Method of forming a non-conformal layer over and exposing a trenchMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 28, 2003·56 cites·1 claims
- 1793US6676484B2Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive padMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 13, 2004·64 cites·48 claims
- 1892US6221763B1Method of forming a metal seed layer for subsequent platingMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 24, 2001·98 cites·115 claims
- 1989US7005379B2Semiconductor processing methods for forming electrical contactsMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 28, 2006·37 cites·21 claims
- 2085US7118686B2Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 10, 2006·23 cites·37 claims
- 2185US7041595B2Method of forming a barrier seed layer with graded nitrogen compositionMICRON TECHNOLOGY INC·Filed 2002·Granted May 9, 2006·25 cites·10 claims
- 2285US6672949B2Polishing apparatusMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 6, 2004·17 cites·26 claims
- 2384US7129160B2Method for simultaneously removing multiple conductive materials from microelectronic substratesMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 31, 2006·21 cites·54 claims
- 2484US6545357B2Metal nitride barrier layer and electroplating seed layer with the same metal as the metal nitride layerMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 8, 2003·22 cites·22 claims
- 2583US6419554B2Fixed abrasive chemical-mechanical planarization of titanium nitrideMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 16, 2002·41 cites·29 claims
- 2682US6561878B2Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing padsMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·13 cites·27 claims
- 2780US6852618B2Combined barrier layer and seed layerMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 8, 2005·22 cites·54 claims
- 2880US6613671B1Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed therebyMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 2, 2003·19 cites·31 claims
- 2978US6964602B2Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing padsMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 15, 2005·10 cites·3 claims
- 3078US6736926B2Inline monitoring of pad loading for CuCMP and developing an endpoint technique for cleaningMICRON TECHNOLOGY INC·Filed 2001·Granted May 18, 2004·16 cites·21 claims
- 3178US6413858B1Barrier and electroplating seed layerMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 2, 2002·40 cites·21 claims
- 3277US9214359B2Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substratesMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 15, 2015·2 cites·20 claims
- 3376US6489235B2Method of forming a metal seed layer for subsequent platingMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 3, 2002·17 cites·111 claims
- 3475US6712676B2Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing padsMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 30, 2004·8 cites·24 claims
- 3575US6620032B2Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assembliesMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 16, 2003·13 cites·12 claims
- 3673US6429133B1Composition compatible with aluminum planarization and methods thereforeMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 6, 2002·35 cites·71 claims
- 3772US7214614B2System for controlling metal formation processes using ion implantationMICRON TECHNOLOGY INC·Filed 2003·Granted May 8, 2007·11 cites·14 claims
- 3872US7063603B2Method and apparatus for cleaning a web-based chemical mechanical planarization systemMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 20, 2006·9 cites·7 claims
- 3970US7662719B2Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methodsMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 16, 2010·2 cites·34 claims
- 4070US7329607B2Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed therebyMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 12, 2008·10 cites·10 claims
- 4170US7109112B2Method of providing a structure using self-aligned featuresMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 19, 2006·8 cites·22 claims
- 4270US6881129B2Fixed-abrasive chemical-mechanical planarization of titanium nitrideMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 19, 2005·7 cites·24 claims
- 4370US6746316B2Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing padsMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 8, 2004·6 cites·13 claims
- 4470US6736869B1Method for forming a planarizing pad for planarization of microelectronic substratesMICRON TECHNOLOGY INC·Filed 2000·Granted May 18, 2004·10 cites·44 claims
- 4569US6703309B1Method of reducing oxidation of metal structures using ion implantation, and device formed by such methodMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 9, 2004·13 cites·26 claims
- 4668US6997781B2Fixed-abrasive chemical-mechanical planarization of titanium nitrideMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 14, 2006·6 cites·22 claims
- 4768US6616828B2Recovery method for platinum plating bathMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 9, 2003·4 cites·68 claims
- 4868US6609957B2Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing padsMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 26, 2003·5 cites·29 claims
- 4967US7713817B2Methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2008·Granted May 11, 2010·2 cites·5 claims
- 5066US7438632B2Method and apparatus for cleaning a web-based chemical mechanical planarization systemMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 21, 2008·1 cites·16 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Dinesh Chopra files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →