Inventor · disambiguated record
Henry K. Utomo
Also filed as: UTOMO HENRY · UTOMO HENRY K
67 granted patents·12 pending applications·575 citations·filing 2004–2021
99Inventor score
Top patents by PatentIndex Score
79 records- 0196US7176481B2In situ doped embedded sige extension and source/drain for enhanced PFET performanceIBM·Filed 2005·Granted Feb 13, 2007·52 cites·28 claims
- 0296US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 0395US8928086B2Strained finFET with an electrically isolated channelIBM·Filed 2013·Granted Jan 6, 2015·19 cites·15 claims
- 0494US9627480B2Junction butting structure using nonuniform trench shapeGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 18, 2017·13 cites·11 claims
- 0594US9577100B2FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regionsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 21, 2017·17 cites·13 claims
- 0694US9190520B2Strained finFET with an electrically isolated channelIBM·Filed 2014·Granted Nov 17, 2015·15 cites·18 claims
- 0794US7781800B2Embedded silicon germanium using a double buried oxide silicon-on-insulator waferIBM·Filed 2008·Granted Aug 24, 2010·24 cites·17 claims
- 0893US7838372B2Methods of manufacturing semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Nov 23, 2010·25 cites·22 claims
- 0992US10109675B2Forming self-aligned contacts on pillar structuresIBM·Filed 2017·Granted Oct 23, 2018·6 cites·15 claims
- 1092US9634084B1Conformal buffer layer in source and drain regions of fin-type transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 1192US9082851B2FinFET having suppressed leakage currentIBM·Filed 2013·Granted Jul 14, 2015·15 cites·13 claims
- 1291US10557779B2Semiconductor manufactured nano-structures for microbe or virus trapping or destructionIBM·Filed 2016·Granted Feb 11, 2020·4 cites·6 claims
- 1390US7504336B2Methods for forming CMOS devices with intrinsically stressed metal silicide layersIBM·Filed 2006·Granted Mar 17, 2009·16 cites·18 claims
- 1489US7960798B2Structure and method to form multilayer embedded stressorsIBM·Filed 2009·Granted Jun 14, 2011·11 cites·10 claims
- 1589US7135724B2Structure and method for making strained channel field effect transistor using sacrificial spacerIBM·Filed 2004·Granted Nov 14, 2006·47 cites·16 claims
- 1688US9875939B1Methods of forming uniform and pitch independent fin recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·5 cites·20 claims
- 1788US7618866B2Structure and method to form multilayer embedded stressorsIBM·Filed 2006·Granted Nov 17, 2009·11 cites·9 claims
- 1887US10393635B2Semiconductor manufactured nano-structures for microbe or virus trapping or destructionIBM·Filed 2016·Granted Aug 27, 2019·2 cites·5 claims
- 1987US10049942B2Asymmetric semiconductor device and method of forming sameGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 14, 2018·5 cites·11 claims
- 2086US9190406B2Fin field effect transistors having heteroepitaxial channelsIBM·Filed 2014·Granted Nov 17, 2015·7 cites·20 claims
- 2186US8492286B2Method of forming E-fuse in replacement metal gate manufacturing processUTOMO HENRY K·Filed 2010·Granted Jul 23, 2013·9 cites·16 claims
- 2285US9680019B1Fin-type field-effect transistors with strained channelsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·3 cites·13 claims
- 2385US9536900B2Forming fins of different semiconductor materials on the same substrateGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·7 cites·13 claims
- 2485US8927408B2Self-aligned contact employing a dielectric metal oxide spacerIBM·Filed 2013·Granted Jan 6, 2015·6 cites·20 claims
- 2585US8138053B2Method of forming source and drain of field-effect-transistor and structure thereofUTOMO HENRY K·Filed 2007·Granted Mar 20, 2012·12 cites·20 claims
- 2684US7446350B2Embedded silicon germanium using a double buried oxide silicon-on-insulator waferIBM·Filed 2005·Granted Nov 4, 2008·9 cites·18 claims
- 2783US10777735B2Contact via structuresIBM·Filed 2019·Granted Sep 15, 2020·2 cites·20 claims
- 2883US10246730B2Semiconductor manufactured nano-structures for microbe or virus trapping or destructionIBM·Filed 2016·Granted Apr 2, 2019·3 cites·6 claims
- 2983US10243077B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2017·Granted Mar 26, 2019·2 cites·10 claims
- 3082US8236637B2Planar silicide semiconductor structureUTOMO HENRY K·Filed 2010·Granted Aug 7, 2012·7 cites·8 claims
- 3181US8987827B2Prevention of faceting in epitaxial source drain transistorsST MICROELECTRONICS INC·Filed 2013·Granted Mar 24, 2015·6 cites·44 claims
- 3281US8637941B2Self-aligned contact employing a dielectric metal oxide spacerLI YING·Filed 2010·Granted Jan 28, 2014·5 cites·12 claims
- 3381US7935593B2Stress optimization in dual embedded epitaxially grown semiconductor processingSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·7 cites·27 claims
- 3481US7482209B2Hybrid orientation substrate and method for fabrication of thereofIBM·Filed 2006·Granted Jan 27, 2009·6 cites·1 claims
- 3580US9917190B2FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2015·Granted Mar 13, 2018·2 cites·7 claims
- 3680US9312364B2finFET with dielectric isolation after gate module for improved source and drain region epitaxial growthIBM·Filed 2014·Granted Apr 12, 2016·3 cites·11 claims
- 3780US8198194B2Methods of forming p-channel field effect transistors having SiGe source/drain regionsYANG JONG HO·Filed 2010·Granted Jun 12, 2012·8 cites·11 claims
- 3879US9029913B2Silicon-germanium fins and silicon fins on a bulk substrateIBM·Filed 2013·Granted May 12, 2015·5 cites·22 claims
- 3979US8420491B2Structure and method for replacement metal gate field effect transistorsUTOMO HENRY K·Filed 2010·Granted Apr 16, 2013·7 cites·12 claims
- 4079US7645656B2Structure and method for making strained channel field effect transistor using sacrificial spacerIBM·Filed 2006·Granted Jan 12, 2010·7 cites·18 claims
- 4178US9818877B2Embedded source/drain structure for tall finFET and method of formationIBM·Filed 2014·Granted Nov 14, 2017·4 cites·7 claims
- 4278US7737468B2Semiconductor devices having recesses filled with semiconductor materialsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jun 15, 2010·6 cites·9 claims
- 4376US9577099B2Diamond shaped source drain epitaxy with underlying buffer layerGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 21, 2017·2 cites·17 claims
- 4476US8063449B2Semiconductor devices and methods of manufacture thereofHAN JIN-PING·Filed 2009·Granted Nov 22, 2011·6 cites·22 claims
- 4575US10686124B2Contact via structuresIBM·Filed 2018·Granted Jun 16, 2020·1 cites·6 claims
- 4674US11060960B2Semiconductor manufactured nano-structures for microbe or virus trapping or destructionIBM·Filed 2019·Granted Jul 13, 2021·0 cites·7 claims
- 4774US10559690B2Embedded source/drain structure for tall FinFET and method of formationIBM·Filed 2017·Granted Feb 11, 2020·1 cites·13 claims
- 4873US11150168B2Semiconductor manufactured nano-structures for microbe or virus trapping or destructionIBM·Filed 2020·Granted Oct 19, 2021·0 cites·10 claims
- 4973US9905694B2Fin-type field-effect transistors with strained channelsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·1 cites·7 claims
- 5072US7652336B2Semiconductor devices and methods of manufacture thereofIBM·Filed 2007·Granted Jan 26, 2010·4 cites·29 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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