Inventor · disambiguated record
Horng-Nan Chern
Also filed as: CHERN HORNG-NAN
17 granted patents·4 pending applications·185 citations·filing 1997–2014
94Inventor score
Top patents by PatentIndex Score
21 records- 0178US9490360B2Semiconductor device and operating method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 8, 2016·5 cites·19 claims
- 0267US6211021B1Method for forming a borderless contactUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 3, 2001·26 cites·12 claims
- 0362US6429135B1Method of reducing stress between a nitride silicon spacer and a substrateUNITED MICROELECTRONICS CORP·Filed 2001·Granted Aug 6, 2002·10 cites·10 claims
- 0462US5963811AMethod of fabricating a MOS device with a localized punchthrough stopperPOWERCHIP SEMICONDUCTOR CORP·Filed 1997·Granted Oct 5, 1999·22 cites·20 claims
- 0561US6100158AMethod of manufacturing an alignment mark with an etched back dielectric layer and a transparent dielectric layer and a device region on a higher plane with a wiring layer and an isolation regionUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 8, 2000·27 cites·13 claims
- 0661US6040241AMethod of avoiding sidewall residue in forming connectionsUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 21, 2000·20 cites·13 claims
- 0751US6124161AMethod for fabricating a hemispherical silicon grain layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 26, 2000·12 cites·20 claims
- 0849US6238974B1Method of forming DRAM capacitors with a native oxide etch-stopUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 29, 2001·16 cites·9 claims
- 0945US6177310B1Method for forming capacitor of memory cellUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 23, 2001·11 cites·16 claims
- 1044US6303435B1Method of fabricating a wide-based box-structured capacitor containing hemi-spherical grainsUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 16, 2001·1 cites·14 claims
- 1143US6255229B1Method for forming semiconductor dielectric layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 3, 2001·10 cites·12 claims
- 1240US6211086B1Method of avoiding CMP caused residue on wafer edge uncompleted fieldUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 3, 2001·7 cites·19 claims
- 1339US6063660AFabricating method of stacked type capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 16, 2000·5 cites·12 claims
- 1437US2001032994A1Method of fabricating a wide-based box- structured capacitor containing hemi-spherical grainsFiled 2001·Application pending·0 cites
- 1536US6159806AMethod for increasing the effective spacer widthUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 12, 2000·7 cites·22 claims
- 1635US2002098699A1Method of forming a bit line and a node contact holeFiled 2001·Application pending·0 cites
- 1735US2002111011A1Method for forming a contact plug without a dimple surfaceFiled 2001·Application pending·0 cites
- 1833US6403411B1Method for manufacturing lower electrode of DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 11, 2002·3 cites·9 claims
- 1932US5981336AProcess for forming double-layer crown capacitorPOWERCHIP SEMICONDUCTOR CORP·Filed 1997·Granted Nov 9, 1999·2 cites·25 claims
- 2032US2002173099A1Method for fabricating a mos transistor of an embedded memoryFiled 2001·Application pending·0 cites
- 2130US6140202AMethod of fabricating double-cylinder capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 31, 2000·1 cites·17 claims
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