Inventor · disambiguated record
Yoshitaka Yokota
Also filed as: YOKOTA YOSHITAKA
22 granted patents·5 pending applications·688 citations·filing 2001–2014
96Inventor score
Top patents by PatentIndex Score
27 records- 0199US7547633B2UV assisted thermal processingAPPLIED MATERIALS INC·Filed 2006·Granted Jun 16, 2009·473 cites·20 claims
- 0293US7972441B2Thermal oxidation of silicon using ozoneAPPLIED MATERIALS INC·Filed 2005·Granted Jul 5, 2011·22 cites·7 claims
- 0393US6713127B2Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVDAPPLIED MATERIALS INC·Filed 2001·Granted Mar 30, 2004·82 cites·10 claims
- 0490US8056500B2Thermal reactor with improved gas flow distributionTSENG MING-KUEI MICHAEL·Filed 2008·Granted Nov 15, 2011·17 cites·20 claims
- 0590US7947561B2Methods for oxidation of a semiconductor deviceAPPLIED MATERIALS INC·Filed 2009·Granted May 24, 2011·14 cites·18 claims
- 0689US8608853B2Thermal reactor with improved gas flow distributionTSENG MING-KUEI MICHAEL·Filed 2011·Granted Dec 17, 2013·10 cites·15 claims
- 0787US8888916B2Thermal reactor with improved gas flow distributionAPPLIED MATERIALS INC·Filed 2013·Granted Nov 18, 2014·6 cites·20 claims
- 0887US8741785B2Remote plasma radical treatment of silicon oxideAPPLIED MATERIALS INC·Filed 2012·Granted Jun 3, 2014·7 cites·5 claims
- 0986US8409353B2Water cooled gas injectorYOKOTA YOSHITAKA·Filed 2011·Granted Apr 2, 2013·6 cites·15 claims
- 1085US9023700B2Method and apparatus for single step selective nitridationAPPLIED MATERIALS INC·Filed 2014·Granted May 5, 2015·5 cites·11 claims
- 1185US8207044B2Methods for oxidation of a semiconductor deviceMANI RAJESH·Filed 2011·Granted Jun 26, 2012·8 cites·18 claims
- 1284US8546271B2Method of improving oxide growth rate of selective oxidation processesYOKOTA YOSHITAKA·Filed 2011·Granted Oct 1, 2013·5 cites·20 claims
- 1384US8492292B2Methods of forming oxide layers on substratesYOKOTA YOSHITAKA·Filed 2010·Granted Jul 23, 2013·7 cites·19 claims
- 1484US7951728B2Method of improving oxide growth rate of selective oxidation processesAPPLIED MATERIALS INC·Filed 2007·Granted May 31, 2011·7 cites·23 claims
- 1583US8043981B2Dual frequency low temperature oxidation of a semiconductor deviceAPPLIED MATERIALS INC·Filed 2010·Granted Oct 25, 2011·6 cites·26 claims
- 1682US8748259B2Method and apparatus for single step selective nitridationGANGULY UDAYAN·Filed 2011·Granted Jun 10, 2014·5 cites·19 claims
- 1780US9117661B2Method of improving oxide growth rate of selective oxidation processesAPPLIED MATERIALS INC·Filed 2013·Granted Aug 25, 2015·3 cites·13 claims
- 1873US8916484B2Remote plasma radical treatment of silicon oxideAPPLIED MATERIALS INC·Filed 2014·Granted Dec 23, 2014·2 cites·20 claims
- 1963US8435906B2Methods for forming conformal oxide layers on semiconductor devicesTJANDRA AGUS S·Filed 2010·Granted May 7, 2013·2 cites·15 claims
- 2061US9431237B2Post treatment methods for oxide layers on semiconductor devicesMA KAI·Filed 2010·Granted Aug 30, 2016·1 cites·18 claims
- 2155US9530898B2Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereofAPPLIED MATERIALS INC·Filed 2014·Granted Dec 27, 2016·0 cites·8 claims
- 2253US2007026693A1Method of Thermally Oxidizing Silicon Using OzoneAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2352US8497193B2Method of thermally treating silicon with oxygenYOKOTA YOSHITAKA·Filed 2011·Granted Jul 30, 2013·0 cites·21 claims
- 2447US2010120245A1Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing filmsTJANDRA AGUS SOFIAN·Filed 2008·Application pending·0 cites
- 2547US2009311877A1Post oxidation annealing of low temperature thermal or plasma based oxidationAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2637US2006240680A1Substrate processing platform allowing processing in different ambientsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2735US2011061812A1Apparatus and Methods for Cyclical Oxidation and EtchingAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
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