Inventor · disambiguated record
Jeff Zhiqiang Wu
Also filed as: WU JEFF · WU JEFF Z · WU JEFF ZHIQIANG
24 granted patents·633 citations·filing 1995–2001
97Inventor score
Files withMICRON TECHNOLOGY INC24
Top patents by PatentIndex Score
24 records- 0196US5780906AStatic memory cell and method of manufacturing a static memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 14, 1998·184 cites·14 claims
- 0292US6404018B1Static memory cell and method of manufacturing a static memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 11, 2002·72 cites·12 claims
- 0391US6184539B1Static memory cell and method of forming static memory cellMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 6, 2001·75 cites·30 claims
- 0481US5976926AStatic memory cell and method of manufacturing a static memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 2, 1999·38 cites·27 claims
- 0579US5811338AMethod of making an asymmetric transistorMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 22, 1998·31 cites·1 claims
- 0670US6144068ATransistor device structures, and methods for forming such structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 7, 2000·20 cites·18 claims
- 0767US6172387B1Semiconductor interconnection structure and methodMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 9, 2001·29 cites·40 claims
- 0866US5773358AMethod of forming a field effect transistor and method of forming CMOS integrated circuitryMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 30, 1998·23 cites·9 claims
- 0964US6653220B2Advance metallization processMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 25, 2003·9 cites·5 claims
- 1064US5721443ANMOS field effect transistors and methods of forming NMOS field effect transistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 24, 1998·21 cites·3 claims
- 1164US5571733AMethod of forming CMOS integrated circuitryMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 5, 1996·23 cites·27 claims
- 1263US5757051AStatic memory cell and method of manufacturing a static memory cellMICRON TECHNOLOGY INC·Filed 1996·Granted May 26, 1998·17 cites·34 claims
- 1362US5672536AMethod of manufacturing a novel static memory cell having a tunnel diodeMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 30, 1997·16 cites·30 claims
- 1460US5629546AStatic memory cell and method of manufacturing a static memory cellMICRON TECHNOLOGY INC·Filed 1995·Granted May 13, 1997·16 cites·10 claims
- 1556US5770497AMethod of manufacturing a novel static memory cell having a tunnel diodeMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 23, 1998·12 cites·13 claims
- 1655US6022783ANMOS field effect transistors and methods of forming NMOS field effect transistorsMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 8, 2000·13 cites·4 claims
- 1754US6476433B1Semiconductor interconnection structure and methodMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 5, 2002·5 cites·17 claims
- 1853US6281109B1Advance metallization processMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 28, 2001·4 cites·7 claims
- 1945US6063673ATransistor device structures, and methods for forming such structuresMICRON TECHNOLOGY INC·Filed 1998·Granted May 16, 2000·6 cites·12 claims
- 2045US5955760ATransistor device structuresMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 21, 1999·6 cites·11 claims
- 2140US5897357AMethod of forming a field effect transistor and method of forming CMOS integrated circuitryMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 27, 1999·6 cites·7 claims
- 2237US6140685AStatic memory cell and method of manufacturing a static memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·3 cites·12 claims
- 2334US6066548AAdvance metallization processMICRON TECHNOLOGY INC·Filed 1996·Granted May 23, 2000·3 cites·7 claims
- 2431US6309935B1Methods of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 30, 2001·1 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →