Inventor · disambiguated record
Yohji Watanabe
Also filed as: WATANABE YOHJI
41 granted patents·1,040 citations·filing 1986–2009
98Inventor score
Top patents by PatentIndex Score
41 records- 0196US4943745ADelay circuit for semiconductor integrated circuit devicesTOSHIBA KK·Filed 1989·Granted Jul 24, 1990·76 cites·28 claims
- 0290US5483482ASemiconductor memory device having bidirectional potential barrier switching elementTOSHIBA KK·Filed 1992·Granted Jan 9, 1996·75 cites·9 claims
- 0389US5289413ADynamic semiconductor memory device with high-speed serial-accessing column decoderTOSHIBA KK·Filed 1991·Granted Feb 22, 1994·75 cites·28 claims
- 0489US4833341ASemiconductor device with power supply voltage converter circuitTOSHIBA KK·Filed 1987·Granted May 23, 1989·41 cites·8 claims
- 0586US6272061B1Semiconductor integrated circuit device having fuses and fuse latch circuitsTOSHIBA KK·Filed 2000·Granted Aug 7, 2001·35 cites·18 claims
- 0684US7079432B2Semiconductor storage device formed to optimize test technique and redundancy technologyTOSHIBA KK·Filed 2005·Granted Jul 18, 2006·13 cites·2 claims
- 0783US6741509B2Semiconductor storage device formed to optimize test technique and redundancy technologyTOSHIBA KK·Filed 2002·Granted May 25, 2004·29 cites·43 claims
- 0883US6343038B1Semiconductor memory device of shared sense amplifier systemTOSHIBA KK·Filed 2000·Granted Jan 29, 2002·33 cites·20 claims
- 0983US5499211ABit-line precharge current limiter for CMOS dynamic memoriesIBM·Filed 1995·Granted Mar 12, 1996·57 cites·8 claims
- 1083US5023476ASemiconductor device with power supply mode-change controller for reliability testingTOSHIBA KK·Filed 1989·Granted Jun 11, 1991·29 cites·9 claims
- 1180US5636158AIrregular pitch layout for a semiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Jun 3, 1997·46 cites·16 claims
- 1280US5546349AExchangeable hierarchical data line structureTOSHIBA KK·Filed 1995·Granted Aug 13, 1996·46 cites·7 claims
- 1379US6646932B2Semiconductor memory device having redundancy systemTOKYO SHIBAURA ELECTRIC CO·Filed 2002·Granted Nov 11, 2003·24 cites·26 claims
- 1479US6603689B2Semiconductor memory device having redundancy systemTOSHIBA KK·Filed 2002·Granted Aug 5, 2003·22 cites·34 claims
- 1579US5434821ADynamic semiconductor memory device having sense amplifier with compensated offset voltageTOSHIBA KK·Filed 1992·Granted Jul 18, 1995·41 cites·21 claims
- 1678US5963489AMethod and apparatus for redundancy word line replacement in a repairable semiconductor memory deviceIBM·Filed 1998·Granted Oct 5, 1999·43 cites·21 claims
- 1777US5274596ADynamic semiconductor memory device having simultaneous operation of adjacent blocksTOSHIBA KK·Filed 1993·Granted Dec 28, 1993·41 cites·7 claims
- 1877US4780854ASemiconductor integrated circuit deviceTOSHIBA KK·Filed 1986·Granted Oct 25, 1988·35 cites·16 claims
- 1976US4967395ADram with (1/2)VCC precharge and selectively operable limiting circuitTOSHIBA KK·Filed 1989·Granted Oct 30, 1990·32 cites·7 claims
- 2075US6834016B2Semiconductor memory device having redundancy systemTOSHIBA KK·Filed 2003·Granted Dec 21, 2004·18 cites·9 claims
- 2174US7888769B2Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2007·Granted Feb 15, 2011·6 cites·8 claims
- 2273US8027216B2Semiconductor memory deviceTOSHIBA KK·Filed 2009·Granted Sep 27, 2011·8 cites·19 claims
- 2369US6337821B1Dynamic random access memory having continuous data line equalization except at address translation during data readingTOSHIBA KK·Filed 2000·Granted Jan 8, 2002·14 cites·12 claims
- 2469US4814686AFET reference voltage generator which is impervious to input voltage fluctuationsTOSHIBA KK·Filed 1987·Granted Mar 21, 1989·20 cites·11 claims
- 2568US6373772B2Semiconductor integrated circuit device having fuses and fuse latch circuitsTOSHIBA KK·Filed 2001·Granted Apr 16, 2002·13 cites·11 claims
- 2668US5544113ARandom access memory having a flexible array redundancy schemeIBM·Filed 1994·Granted Aug 6, 1996·26 cites·10 claims
- 2765US7218560B2Semiconductor memory deviceTOSHIBA KK·Filed 2005·Granted May 15, 2007·3 cites·4 claims
- 2865US6856561B2Semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Feb 15, 2005·12 cites·26 claims
- 2965US5994937ATemperature and power supply adjusted address transition detectorIBM·Filed 1996·Granted Nov 30, 1999·19 cites·15 claims
- 3059US6876588B2Semiconductor storage device formed to optimize test technique and redundancy technologyTOSHIBA KK·Filed 2003·Granted Apr 5, 2005·8 cites·2 claims
- 3159US5561636ARandom access memory with a simple test arrangementIBM·Filed 1996·Granted Oct 1, 1996·18 cites·18 claims
- 3258US5991211ASemiconductor memory device with redundancy control circuitsTOSHIBA KK·Filed 1998·Granted Nov 23, 1999·18 cites·20 claims
- 3357US7732840B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jun 8, 2010·1 cites·12 claims
- 3457US6055197ASemiconductor memory device with simultaneously activated elements and a redundancy scheme thereofTOSHIBA KK·Filed 1998·Granted Apr 25, 2000·17 cites·15 claims
- 3556US6301144B1Semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Oct 9, 2001·9 cites·18 claims
- 3653US5517442ARandom access memory and an improved bus arrangement thereforIBM·Filed 1995·Granted May 14, 1996·14 cites·11 claims
- 3743US6108254ADynamic random access memory having continuous data line equalization except at address transition during data readingTOSHIBA KK·Filed 1993·Granted Aug 22, 2000·8 cites·13 claims
- 3839US5699294ASemiconductor memory device having bidirectional potential barrier switching elementTOSHIBA KK·Filed 1995·Granted Dec 16, 1997·5 cites·13 claims
- 3937US6021061ASemiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Feb 1, 2000·5 cites·20 claims
- 4031US5933371AWrite amplifier for use in semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Aug 3, 1999·1 cites·12 claims
- 4130US6711648B1Methods and apparatus for increasing data bandwidth in a dynamic memory device by generating a delayed address transition detection signal in response to a column address strobe signalSIEMENS AG KABUSHIKI KAISHA TO·Filed 1997·Granted Mar 23, 2004·4 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →