Inventor · disambiguated record
In-Seon Park
Also filed as: PARK IN-SEON
9 granted patents·1,082 citations·filing 1990–2001
91Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9
Top patents by PatentIndex Score
9 records- 0198US6335240B1Capacitor for a semiconductor device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 1, 2002·468 cites·3 claims
- 0298US6144060AIntegrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperatureSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 7, 2000·457 cites·17 claims
- 0393US6489214B2Method for forming a capacitor of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·56 cites·20 claims
- 0475US5656337AMethod of forming a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Aug 12, 1997·54 cites·11 claims
- 0550US6046927ANonvolatile semiconductor memory device, a method of fabricating the same, and read, erase write methods of the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 4, 2000·12 cites·21 claims
- 0648US5814556AMethod of filling a contact hole in a semiconductor substrate with a metalSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 29, 1998·15 cites·5 claims
- 0740US6077772AMethods of forming metal interconnections including thermally treated barrier layersSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 20, 2000·12 cites·16 claims
- 0835US5560778AApparatus for forming a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 1, 1996·5 cites·2 claims
- 0932US5096847AMethod making an ultra high density dram cell with stacked capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Mar 17, 1992·3 cites·6 claims
Join the waitlist — get patent alerts
Get an alert when In-Seon Park files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →