Inventor · disambiguated record
Chi-Hsiao Chen
Also filed as: CHEN CHI-HSIAO
7 granted patents·2 pending applications·0 citations·filing 2017–2025
70Inventor score
Files withUNITED MICROELECTRONICS CORP9
Top patents by PatentIndex Score
9 records- 0177US12396201B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Aug 19, 2025·0 cites·11 claims
- 0276US12266723B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Apr 1, 2025·0 cites·11 claims
- 0376US2025248061A1Hemt and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0468US12289900B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 29, 2025·0 cites·5 claims
- 0563US11955541B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 9, 2024·0 cites·8 claims
- 0655US12176403B2High electron mobility transistor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 24, 2024·0 cites·19 claims
- 0753US10629734B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 21, 2020·0 cites·5 claims
- 0846US10229995B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 12, 2019·0 cites·5 claims
- 0931US2018358453A1Tunneling field effect transistorUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →