Inventor · disambiguated record
Hiroyuki Ohtori
Also filed as: OHTORI HIROYUKI
8 granted patents·4 pending applications·50 citations·filing 2016–2023
84Inventor score
Top patents by PatentIndex Score
12 records- 0195US10263178B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 16, 2019·15 cites·18 claims
- 0295US9947862B2Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 17, 2018·16 cites·21 claims
- 0394US10510950B2Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 17, 2019·12 cites·7 claims
- 0491US11201189B2Semiconductor device having rare earth oxide layer and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Dec 14, 2021·4 cites·9 claims
- 0576US9882119B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 30, 2018·2 cites·20 claims
- 0669US10784280B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Sep 22, 2020·1 cites·20 claims
- 0754US10305025B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted May 28, 2019·0 cites·10 claims
- 0854US2024178298A1Semiconductor device and method of manufacturing the sameKIOXIA CORP·Filed 2023·Application pending·0 cites
- 0950US12376302B2Semiconductor memory device and method for manufacturing semiconductor memory deviceKIOXIA CORP·Filed 2022·Granted Jul 29, 2025·0 cites·14 claims
- 1049US2018076262A1Semiconductor device having rare earth oxide layer and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
- 1146US2018205006A1Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2018·Application pending·0 cites
- 1234US2018277745A1Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →