Inventor · disambiguated record
Ashonita A. Chavan
Also filed as: CHAVAN ASHONITA · CHAVAN ASHONITA A
47 granted patents·7 pending applications·342 citations·filing 2009–2025
98Inventor score
Files withMICRON TECHNOLOGY INC50DRISCOLL DANIEL CARLETON2BERGMANN MICHAEL JOHN1MICRON TECHONOLOGY INC1
Top patents by PatentIndex Score
54 records- 0198US11552086B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 10, 2023·4 cites·14 claims
- 0298US9876018B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 23, 2018·27 cites·41 claims
- 0398US9305929B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·60 cites·35 claims
- 0497US9935114B1Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitorsMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 3, 2018·17 cites·55 claims
- 0597US9460770B1Methods of operating ferroelectric memory cells, and related ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 4, 2016·27 cites·23 claims
- 0696US9768181B2Ferroelectric memory and methods of forming the sameMICRON TECHONOLOGY INC·Filed 2014·Granted Sep 19, 2017·15 cites·29 claims
- 0796US9673203B2Memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·7 cites·28 claims
- 0895US10650978B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturbMICRON TECHNOLOGY INC·Filed 2017·Granted May 12, 2020·7 cites·11 claims
- 0995US10622366B2Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitorsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·10 cites·19 claims
- 1095US8536615B1Semiconductor device structures with modulated and delta doping and related methodsDRISCOLL DANIEL CARLETON·Filed 2010·Granted Sep 17, 2013·54 cites·29 claims
- 1194US9887204B2Memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 6, 2018·4 cites·19 claims
- 1293US11170834B2Memory cells and methods of forming a capacitor including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 9, 2021·9 cites·16 claims
- 1393US10242989B2Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methodsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 26, 2019·8 cites·15 claims
- 1493US10217753B2Memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·3 cites·16 claims
- 1593US8575592B2Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknessesBERGMANN MICHAEL JOHN·Filed 2010·Granted Nov 5, 2013·42 cites·33 claims
- 1692US10192605B2Memory cells and semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 29, 2019·8 cites·20 claims
- 1792US9147689B1Methods of forming ferroelectric capacitorsMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 29, 2015·13 cites·30 claims
- 1891US11264395B1Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 1, 2022·2 cites·24 claims
- 1988US9697881B2Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitorsMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 4, 2017·6 cites·20 claims
- 2087US11063054B2Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitorsMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 13, 2021·3 cites·10 claims
- 2184US11244951B2Memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 8, 2022·1 cites·22 claims
- 2284US10748914B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 18, 2020·2 cites·30 claims
- 2384US9899072B2Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitorsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 20, 2018·4 cites·20 claims
- 2484US2025118493A1Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric MaterialMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2582US8604461B2Semiconductor device structures with modulated doping and related methodsDRISCOLL DANIEL CARLETON·Filed 2009·Granted Dec 10, 2013·8 cites·43 claims
- 2681US11856790B2Ferroelectric capacitorsMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 26, 2023·0 cites·9 claims
- 2780US2025275151A1Memory device assembly with a leaker deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2879US12432928B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 30, 2025·0 cites·22 claims
- 2979US12237112B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 25, 2025·0 cites·7 claims
- 3078US11706929B2Memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 18, 2023·0 cites·17 claims
- 3178US10833092B2Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 10, 2020·1 cites·23 claims
- 3277US11711924B2Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 25, 2023·0 cites·20 claims
- 3374US11871582B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·14 claims
- 3473US11469043B2Electronic device comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 11, 2022·0 cites·5 claims
- 3572US11315939B2Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 3671US12302585B2Memory device assembly with a leaker deviceMICRON TECHNOLOGY INC·Filed 2022·Granted May 13, 2025·0 cites·24 claims
- 3771US11676768B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 13, 2023·0 cites·18 claims
- 3870US10903218B2Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 26, 2021·0 cites·22 claims
- 3966US11404217B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 4066US10741567B2Memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 11, 2020·0 cites·22 claims
- 4165US12150312B2Array of capacitors, array of memory cells, methods of forming an array of capacitors, and methods of forming an array of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 4265US11735416B2Electronic devices comprising crystalline materials and related memory devices and systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 22, 2023·0 cites·19 claims
- 4362US11935574B2Memory cells and methods of forming a capacitor including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 19, 2024·0 cites·13 claims
- 4459US10950384B2Method used in forming an electronic device comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 16, 2021·0 cites·35 claims
- 4558US2024155847A1Memory device assembly with a leaker deviceMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 4657US2020227423A1Ferroelectric Devices and Methods of Forming Ferroelectric DevicesMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 4756US10790145B2Methods of forming crystallized materials from amorphous materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 29, 2020·0 cites·14 claims
- 4855US11244952B2Array of capacitors, array of memory cells, methods of forming an array of capacitors, and methods of forming an array of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 8, 2022·0 cites·24 claims
- 4955US2019189627A1Ferroelectric memory cells including ferroelectric crystalline materials having polar and chiral crystal structures, and related memory devicesMICRON TECHNOLOGY INC·Filed 2019·Application pending·0 cites
- 5054US10438643B2Devices and apparatuses including asymmetric ferroelectric materials, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →