Inventor · disambiguated record
Taro Kondo
Also filed as: KONDO TARO
14 granted patents·7 pending applications·34 citations·filing 2011–2025
87Inventor score
Top patents by PatentIndex Score
21 records- 0194US9929265B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Mar 27, 2018·14 cites·6 claims
- 0288US9825027B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Nov 21, 2017·7 cites·7 claims
- 0387US10332992B1Semiconductor device having improved trench, source and gate electrode structuresSANKEN ELECTRIC CO LTD·Filed 2018·Granted Jun 25, 2019·6 cites·16 claims
- 0486US12328925B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2022·Granted Jun 10, 2025·1 cites·18 claims
- 0581US9818696B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Nov 14, 2017·4 cites·8 claims
- 0667US10312363B1Semiconductor device having improved edge trench, source electrode and gate electrode structuresSANKEN ELECTRIC CO LTD·Filed 2018·Granted Jun 4, 2019·1 cites·8 claims
- 0760US8796031B2Microchip for platelet examination and platelet examination device using sameHOSOKAWA KAZUYA·Filed 2011·Granted Aug 5, 2014·1 cites·17 claims
- 0850US2024096957A1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 0949US11538934B2Semiconductor device having a group of trenches in an active region and a mesa portionSANKEN ELECTRIC CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·7 claims
- 1049US2025301723A1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 1146US11967643B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·17 claims
- 1246US10573741B1Vertical power MOSFET device having doped regions between insulated trenches and a junction arranged therebetweenSANKEN ELECTRIC CO LTD·Filed 2018·Granted Feb 25, 2020·0 cites·10 claims
- 1345US2022093727A1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2021·Application pending·0 cites
- 1443US10892359B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jan 12, 2021·0 cites·9 claims
- 1543US10361298B2Semiconductor device having improved trench and electrode structuresSANKEN ELECTRIC CO LTD·Filed 2017·Granted Jul 23, 2019·0 cites·10 claims
- 1640US10991815B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Apr 27, 2021·0 cites·5 claims
- 1739US2019148487A1Semiconductor device including partitioning layer extending between gate electrode and source electrodeSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 1837US2018175189A1Semiconductor device including auxiliary structureSANKEN ELECTRIC CO LTD·Filed 2016·Application pending·0 cites
- 1935US2018337172A1Semiconductor DeviceSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 2033US9711635B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jul 18, 2017·0 cites·10 claims
- 2133US2019165097A1Semiconductor device having through hole, source and gate electrode structuresSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →