Inventor · disambiguated record
Jeffrey Pearse
Also filed as: PEARSE JEFFREY
19 granted patents·2 pending applications·770 citations·filing 1994–2012
96Inventor score
Top patents by PatentIndex Score
21 records- 0197US5424245AMethod of forming vias through two-sided substrateMOTOROLA INC·Filed 1994·Granted Jun 13, 1995·318 cites·5 claims
- 0292US5897343AMethod of making a power switching trench MOSFET having aligned source regionsMOTOROLA INC·Filed 1998·Granted Apr 27, 1999·119 cites·7 claims
- 0385US6953980B2Semiconductor filter circuit and methodSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Oct 11, 2005·37 cites·19 claims
- 0483US6392266B1Transient suppressing device and methodSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted May 21, 2002·39 cites·20 claims
- 0581US6753228B2Method of forming a low resistance semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Jun 22, 2004·37 cites·8 claims
- 0678US6943408B2Semiconductor bidirectional switching deviceSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Sep 13, 2005·23 cites·11 claims
- 0778US6373100B1Semiconductor device and method for fabricating the sameSEMICONDUCTOR COMPONENTS IND·Filed 1998·Granted Apr 16, 2002·50 cites·6 claims
- 0877US8471331B2Method of making an insulated gate semiconductor device with source-substrate connection and structureIYER DORAI·Filed 2011·Granted Jun 25, 2013·8 cites·20 claims
- 0977US6515345B2Transient voltage suppressor with diode overlaying another diode for conserving spaceSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Feb 4, 2003·24 cites·21 claims
- 1076US7030447B2Low voltage transient voltage suppressorSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Apr 18, 2006·22 cites·16 claims
- 1170US5814545ASemiconductor device having a phosphorus doped PECVD film and a method of manufactureMOTOROLA INC·Filed 1997·Granted Sep 29, 1998·44 cites·10 claims
- 1269US6781195B2Semiconductor bidirectional switching device and methodSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Aug 24, 2004·14 cites·16 claims
- 1367US7102199B2Low voltage transient voltage suppressor and method of makingSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Sep 5, 2006·11 cites·5 claims
- 1465US8304314B2Method of forming an MOS transistorPEARSE JEFFREY·Filed 2008·Granted Nov 6, 2012·4 cites·15 claims
- 1560US8772865B2MOS transistor structureSEMICONDUCTOR COMPONENTS IND·Filed 2012·Granted Jul 8, 2014·1 cites·8 claims
- 1658US6633063B2Low voltage transient voltage suppressor and method of makingSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Oct 14, 2003·6 cites·15 claims
- 1757US7135761B2Robust power semiconductor packageSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Nov 14, 2006·7 cites·26 claims
- 1851US6984876B2Semiconductor device formed having a metal layer for conducting the device current and for high contrast marking and method thereofSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Jan 10, 2006·4 cites·23 claims
- 1942US6730606B1Trench growth techniques using selective epitaxySEMICONDUCTOR COMPONENTS IND·Filed 2000·Granted May 4, 2004·2 cites·25 claims
- 2032US2004219752A1Method of forming a low resistance semiconductor device and structure thereforFiled 2004·Application pending·0 cites
- 2126US2002121663A1Semiconductor device and methodSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
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