Inventor · disambiguated record
Philip A. Saunders
Also filed as: SAUNDERS PHILIP A
4 granted patents·57 citations·filing 2004–2008
76Inventor score
Files withIBM4
Top patents by PatentIndex Score
4 records- 0189US7235812B2Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniquesIBM·Filed 2004·Granted Jun 26, 2007·41 cites·12 claims
- 0282US7445977B2Method of creating defect free high Ge content (> 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniquesIBM·Filed 2007·Granted Nov 4, 2008·7 cites·1 claims
- 0379US7704815B2Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniquesIBM·Filed 2008·Granted Apr 27, 2010·5 cites·24 claims
- 0467US7897480B2Preparation of high quality strained-semiconductor directly-on-insulator substratesIBM·Filed 2007·Granted Mar 1, 2011·4 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →