Inventor · disambiguated record
Shu-Yen Chan
Also filed as: CHAN SHU-YEN
34 granted patents·20 pending applications·208 citations·filing 2004–2023
96Inventor score
Top patents by PatentIndex Score
54 records- 0196US8324059B2Method of fabricating a semiconductor structureGUO TED MING-LANG·Filed 2011·Granted Dec 4, 2012·97 cites·11 claims
- 0294US9673324B1MOS device with epitaxial structure associated with source/drain region and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 6, 2017·14 cites·20 claims
- 0393US10217750B1Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·9 cites·4 claims
- 0490US8580625B2Metal oxide semiconductor transistor and method of manufacturing the sameLU TSUO-WEN·Filed 2011·Granted Nov 12, 2013·13 cites·26 claims
- 0590US8183118B2Method for fabricating MOS transistorLU TSUO-WEN·Filed 2010·Granted May 22, 2012·12 cites·20 claims
- 0689US8502288B2Semiconductor structure and method for slimming spacerGUO TED MING-LANG·Filed 2011·Granted Aug 6, 2013·11 cites·7 claims
- 0788US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 0887US8674452B2Semiconductor device with lower metal layer thickness in PMOS regionCHIEN CHIN-CHENG·Filed 2011·Granted Mar 18, 2014·10 cites·5 claims
- 0985US10497704B2Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·3 cites·9 claims
- 1081US8476169B2Method of making strained silicon channel semiconductor structureYANG CHAN-LON·Filed 2011·Granted Jul 2, 2013·4 cites·14 claims
- 1180US10608093B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 31, 2020·2 cites·10 claims
- 1278US9680022B1Semiconductor device having silicon-germanium layer on fin and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 13, 2017·2 cites·9 claims
- 1375US11770924B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 26, 2023·0 cites·6 claims
- 1474US10056288B1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·2 cites·7 claims
- 1573US7435640B2Method of fabricating gate structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 14, 2008·4 cites·11 claims
- 1671US11631679B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 18, 2023·0 cites·7 claims
- 1771US9899498B2Semiconductor device having silicon-germanium layer on fin and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 20, 2018·1 cites·11 claims
- 1871US7601404B2Method for switching decoupled plasma nitridation processes of different dosesUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 13, 2009·4 cites·14 claims
- 1968US10608086B2Semiconductor structure with diffusion barrier region and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 31, 2020·1 cites·17 claims
- 2065US8232605B2Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor deviceLIN CHIEN-LIANG·Filed 2008·Granted Jul 31, 2012·4 cites·13 claims
- 2164US7811892B2Multi-step annealing processUNITED MICROELECTRONICS CORP·Filed 2006·Granted Oct 12, 2010·2 cites·31 claims
- 2263US8841193B2Semiconductor structure and method for slimming spacerUNITED MICROELECTRONICS CORP·Filed 2013·Granted Sep 23, 2014·1 cites·13 claims
- 2361US7927954B2Method for fabricating strained-silicon metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 19, 2011·2 cites·27 claims
- 2460US11502180B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Nov 15, 2022·0 cites·6 claims
- 2559US10847517B2Method for forming semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 24, 2020·0 cites·8 claims
- 2657US11393826B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 19, 2022·0 cites·15 claims
- 2755US10373958B2Semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·0 cites·9 claims
- 2855US8853740B2Strained silicon channel semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Oct 7, 2014·0 cites·7 claims
- 2953US7709316B2Method of fabricating gate structureUNITED MICROELECTRONICS CORP·Filed 2008·Granted May 4, 2010·0 cites·22 claims
- 3051US2013264585A1Semiconductor device with stress-providing structureUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3150US8481391B2Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structureLIAO CHIN-I·Filed 2011·Granted Jul 9, 2013·0 cites·11 claims
- 3250US2013122691A1Method for making semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2012·Application pending·0 cites
- 3349US10332889B2Method of manufacturing a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 25, 2019·0 cites·10 claims
- 3449US2008157231A1Gate structureUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 3549US2014035070A1Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3646US9966468B2Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 8, 2018·0 cites·16 claims
- 3746US2012080721A1Semiconductor structure and method for making the sameLIAO CHIN-I·Filed 2010·Application pending·0 cites
- 3845US2012202328A1Method for fabricating mos transistorLU TSUO-WEN·Filed 2012·Application pending·0 cites
- 3944US2008254642A1Method of fabricating gate dielectric layerUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 4042US10056388B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·0 cites·9 claims
- 4141US2018226470A1Method of fabricating bottom electrodeUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 4238US2018211961A1Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 4338US2007082503A1Method of fabricating a dielectric layerWANG YUN-REN·Filed 2005·Application pending·0 cites
- 4438US2006014350A1Method for fabricating a semiconductor transistor device having ultra-shallow source/drain extensionsWANG YUN-REN·Filed 2004·Application pending·0 cites
- 4537US2018197868A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 4637US2018182760A1Dielectric structure and manufacturing method thereof and memory structureUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 4736US8575043B2Semiconductor device and manufacturing method thereofYANG CHAN-LON·Filed 2011·Granted Nov 5, 2013·0 cites·22 claims
- 4836US2012299157A1Semiconductor process and fabricated structure thereofHSUAN TENG-CHUN·Filed 2011·Application pending·0 cites
- 4936US2012309166A1Process for forming shallow trench isolation structureHSUAN TENG-CHUN·Filed 2011·Application pending·0 cites
- 5036US2019013204A1Method of fabricating buried word line and gate on finfetUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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