Inventor · disambiguated record
Alessandro C. Callegari
Also filed as: CALLEGARI ALESSANDRO · CALLEGARI ALESSANDRO C · CALLEGARI ALESSANDRO CESARE
52 granted patents·15 pending applications·3,167 citations·filing 1987–2012
99Inventor score
Top patents by PatentIndex Score
67 records- 0198US6664186B1Method of film deposition, and fabrication of structuresIBM·Filed 2000·Granted Dec 16, 2003·162 cites·10 claims
- 0298US6395650B1Methods for forming metal oxide layers with enhanced purityIBM·Filed 2000·Granted May 28, 2002·669 cites·16 claims
- 0398US6184121B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 1998·Granted Feb 6, 2001·369 cites·39 claims
- 0497US5470661ADiamond-like carbon films from a hydrocarbon helium plasmaIBM·Filed 1993·Granted Nov 28, 1995·362 cites·7 claims
- 0596US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 0696US6207472B1Low temperature thin film transistor fabricationIBM·Filed 1999·Granted Mar 27, 2001·182 cites·10 claims
- 0796US5830332ASputter deposition of hydrogenated amorphous carbon film and applications thereofIBM·Filed 1997·Granted Nov 3, 1998·267 cites·51 claims
- 0895US6665033B2Method for forming alignment layer by ion beam surface modificationIBM·Filed 2000·Granted Dec 16, 2003·63 cites·6 claims
- 0994US6511876B2High mobility FETS using A1203 as a gate oxideIBM·Filed 2001·Granted Jan 28, 2003·84 cites·38 claims
- 1093US6577011B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 2000·Granted Jun 10, 2003·86 cites·16 claims
- 1192US7569466B2Dual metal gate self-aligned integrationIBM·Filed 2005·Granted Aug 4, 2009·19 cites·10 claims
- 1291US8497212B2Filling narrow openings using ion beam etchBABICH KATHERINA E·Filed 2011·Granted Jul 30, 2013·15 cites·24 claims
- 1391US7223670B2DUV laser annealing and stabilization of SiCOH filmsIBM·Filed 2004·Granted May 29, 2007·33 cites·20 claims
- 1491US6428894B1Tunable and removable plasma deposited antireflective coatingsIBM·Filed 1997·Granted Aug 6, 2002·146 cites·27 claims
- 1590US8772116B2Dielectric equivalent thickness and capacitance scaling for semiconductor devicesIBM·Filed 2012·Granted Jul 8, 2014·11 cites·47 claims
- 1689US6413386B1Reactive sputtering method for forming metal-silicon layerIBM·Filed 2000·Granted Jul 2, 2002·40 cites·22 claims
- 1788US5569501ADiamond-like carbon films from a hydrocarbon helium plasmaIBM·Filed 1995·Granted Oct 29, 1996·82 cites·28 claims
- 1886US7872317B2Dual metal gate self-aligned integrationIBM·Filed 2009·Granted Jan 18, 2011·10 cites·11 claims
- 1985US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 2085US6020946ADry processing for liquid-crystal displays using low energy ion bombardmentIBM·Filed 1998·Granted Feb 1, 2000·83 cites·32 claims
- 2184US6573197B2Thermally stable poly-Si/high dielectric constant material interfacesIBM·Filed 2001·Granted Jun 3, 2003·32 cites·39 claims
- 2283US7611979B2Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacksIBM·Filed 2007·Granted Nov 3, 2009·8 cites·6 claims
- 2383US6759321B2Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiationIBM·Filed 2002·Granted Jul 6, 2004·24 cites·9 claims
- 2483US6061114AAlignment of liquid crystal layersIBM·Filed 1998·Granted May 9, 2000·71 cites·20 claims
- 2580US6448655B1Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiationIBM·Filed 1998·Granted Sep 10, 2002·50 cites·9 claims
- 2678US6974779B2Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2003·Granted Dec 13, 2005·20 cites·33 claims
- 2777US7015152B2Method of film deposition, and fabrication of structuresIBM·Filed 2003·Granted Mar 21, 2006·15 cites·26 claims
- 2875US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 2973US7776701B2Metal oxynitride as a pFET materialIBM·Filed 2008·Granted Aug 17, 2010·4 cites·8 claims
- 3073US7436034B2Metal oxynitride as a pFET materialIBM·Filed 2005·Granted Oct 14, 2008·4 cites·11 claims
- 3172US7667277B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksIBM·Filed 2005·Granted Feb 23, 2010·4 cites·18 claims
- 3272US4859253AMethod for passivating a compound semiconductor surface and device having improved semiconductor-insulator interfaceIBM·Filed 1988·Granted Aug 22, 1989·39 cites·34 claims
- 3370US8895352B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2009·Granted Nov 25, 2014·3 cites·20 claims
- 3470US8816333B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2012·Granted Aug 26, 2014·2 cites·16 claims
- 3569US8288237B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksCALLEGARI ALESSANDRO C·Filed 2009·Granted Oct 16, 2012·5 cites·14 claims
- 3669US7833849B2Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrodeIBM·Filed 2005·Granted Nov 16, 2010·4 cites·18 claims
- 3764US7863083B2High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2008·Granted Jan 4, 2011·1 cites·18 claims
- 3863US6770500B2Process of passivating a metal-gated complementary metal oxide semiconductorIBM·Filed 2002·Granted Aug 3, 2004·10 cites·20 claims
- 3962US7772016B2Method for composition control of a metal compound filmIBM·Filed 2007·Granted Aug 10, 2010·1 cites·20 claims
- 4060US8415677B2Field-effect transistor device having a metal gate stack with an oxygen barrier layerADUSUMILLI PRANEET·Filed 2010·Granted Apr 9, 2013·2 cites·15 claims
- 4160US7521346B2Method of forming HfSiN metal for n-FET applicationsIBM·Filed 2007·Granted Apr 21, 2009·1 cites·1 claims
- 4259US7097884B2Stability of ion beam generated alignment layers by surface modificationIBM·Filed 2003·Granted Aug 29, 2006·5 cites·8 claims
- 4359US2006150912A1Ion gun deposition and alignment for liquid-crystal applicationsIBM·Filed 2006·Application pending·0 cites
- 4457US6583847B2Self alignment of substrates by magnetic alignmentIBM·Filed 2001·Granted Jun 24, 2003·6 cites·6 claims
- 4554US7235440B2Formation of ultra-thin oxide layers by self-limiting interfacial oxidationIBM·Filed 2003·Granted Jun 26, 2007·5 cites·12 claims
- 4652US7755159B2DUV laser annealing and stabilization of SiCOH filmsIBM·Filed 2008·Granted Jul 13, 2010·0 cites·18 claims
- 4752US7566938B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2005·Granted Jul 28, 2009·0 cites·13 claims
- 4852US2010044805A1METAL GATES WITH LOW CHARGE TRAPPING AND ENHANCED DIELECTRIC RELIABILITY CHARACTERISTICS FOR HIGH-k GATE DIELECTRIC STACKSIBM·Filed 2009·Application pending·0 cites
- 4951US6682786B1Liquid crystal display cell having liquid crystal molecules in vertical or substantially vertical alignmentIBM·Filed 1999·Granted Jan 27, 2004·18 cites·8 claims
- 5051US2008245658A1METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONSIBM·Filed 2008·Application pending·0 cites
Showing the top 50 of 67 patent records by PatentIndex Score.
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