Inventor · disambiguated record
Akira Mineji
Also filed as: MINEJI AKIRA
29 granted patents·8 pending applications·340 citations·filing 1994–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD25NEC CORP6NEC ELECTRONICS CORP4TAIWAN SEMICONDUCTOR MFG CO LID1
Top patents by PatentIndex Score
37 records- 0196US10854503B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·9 cites·20 claims
- 0289US5567959ALaminated complementary thin film transistor device with improved threshold adaptabilityNEC CORP·Filed 1994·Granted Oct 22, 1996·80 cites·10 claims
- 0389US2025105054A1Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0488US11646234B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 0587US2025308987A1Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0685US12347725B2Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0785US12165912B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0884US10692760B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·3 cites·20 claims
- 0983US11264485B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·2 cites·20 claims
- 1083US6492218B1Use of a hard mask in the manufacture of a semiconductor deviceNEC CORP·Filed 2000·Granted Dec 10, 2002·33 cites·8 claims
- 1182US12224210B2Method for FinFet fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1282US11688631B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 1382US6372591B1Fabrication method of semiconductor device using ion implantationNEC CORP·Filed 1998·Granted Apr 16, 2002·67 cites·12 claims
- 1481US2025311360A1Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LID·Filed 2025·Application pending·0 cites
- 1580US2024363726A1Capping layer for guide electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1679US11728414B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 1778US11018053B2Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·1 cites·20 claims
- 1878US5807770AFabrication method of semiconductor device containing semiconductor active filmNEC CORP·Filed 1996·Granted Sep 15, 1998·44 cites·17 claims
- 1978US2025185346A1Method For FinFET Fabrication And Structure ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2075US12051620B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2175US11398404B2Semiconductor structure with air gap and method sealing the air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 2275US6017823AMethod of forming a MOS field effect transistor with improved gate side wall insulation filmsNEC CORP·Filed 1997·Granted Jan 25, 2000·48 cites·11 claims
- 2375US5915196AMethod of forming shallow diffusion layers in a semiconductor substrate in the vicinity of a gate electrodeNEC CORP·Filed 1996·Granted Jun 22, 1999·47 cites·66 claims
- 2474US12080779B2Capping layer for gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 2574US11854871B2Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2673US12363980B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2773US11373910B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 2873US11251087B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 2969US11373902B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 3065US11164956B2Capping layer for gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·20 claims
- 3165US7259075B2Method for manufacturing field effect transistorNEC ELECTRONICS CORP·Filed 2005·Granted Aug 21, 2007·2 cites·10 claims
- 3264US11056393B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3361US10685884B2Semiconductor device including a Fin-FET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 3448US7259056B2Method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted Aug 21, 2007·3 cites·8 claims
- 3542US2006199358A1Method for manufacturing field effect transistorNEC ELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 3642US2008142885A1Semiconductor device with improved source and drain and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 3730US2001012670A1Semiconductor device and method manufacturing sameFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →