Inventor · disambiguated record
Stefan Krivec
Also filed as: KRIVEC STEFAN
18 granted patents·5 pending applications·49 citations·filing 2012–2025
89Inventor score
Files withINFINEON TECHNOLOGIES AG17INFINEON TECHNOLOGIES AUSTRIA AG4INFINEON TECHNOLOGIES AUSTRIA1KRIVEC STEFAN1
Top patents by PatentIndex Score
23 records- 0194US9660037B1Semiconductor wafer and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 23, 2017·39 cites·19 claims
- 0284US9929111B2Method of manufacturing a layer structure having partially sealed poresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 27, 2018·4 cites·20 claims
- 0383US9620466B1Method of manufacturing an electronic device having a contact pad with partially sealed poresINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 11, 2017·4 cites·18 claims
- 0482US12327727B2Chip with a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 0582US2025266259A1Chip with a silicon carbide substrate and an electrical contactINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0672US11798807B2Process for producing an electrical contact on a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 24, 2023·0 cites·14 claims
- 0769US9595469B2Semiconductor device and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 14, 2017·2 cites·25 claims
- 0862US11842938B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
- 0962US11043383B2Electrical contact connection on silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 22, 2021·0 cites·12 claims
- 1059US10431698B2Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitrideINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 1, 2019·0 cites·20 claims
- 1156US10199514B2Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 5, 2019·0 cites·19 claims
- 1254US2023274996A1Chip arrangement, chip package, method of forming a chip arrangement, and method of forming a chip packageINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1353US9997459B2Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 12, 2018·0 cites·17 claims
- 1451US11217500B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
- 1548US10393697B2Apparatus for analyzing ion kinetics in dielectricsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 27, 2019·0 cites·24 claims
- 1648US2016181441A1Semiconductor Device and Method for Manufacturing a Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Application pending·0 cites
- 1747US9685347B2Semiconductor device and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 20, 2017·0 cites·29 claims
- 1845US11195713B2Methods of forming a silicon-insulator layer and semiconductor device having the sameINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 7, 2021·0 cites·15 claims
- 1943US10763339B2Method for manufacturing a semiconductor device having a Schottky contactINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 1, 2020·0 cites·18 claims
- 2043US10361096B2Semiconductor component, method for processing a substrate and method for producing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 23, 2019·0 cites·15 claims
- 2141US9599586B2Ion sensorKRIVEC STEFAN·Filed 2012·Granted Mar 21, 2017·0 cites·16 claims
- 2232US2016211140A1Method for Processing a Semiconductor SurfaceINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 2331US2016126197A1Semiconductor device having a stress-compensated chip electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →