Inventor · disambiguated record
Dae-Hwan Kang
Also filed as: KANG DAE-HWAN
32 granted patents·3 pending applications·266 citations·filing 2005–2020
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD27KOREA INST SCI & TECH3HYUNDAI MOTOR CO LTD1KANG DAE-HWAN1KIM SONG-YI1
Top patents by PatentIndex Score
35 records- 0198US9741764B1Memory device including ovonic threshold switch adjusting threshold voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·37 cites·20 claims
- 0297US9941333B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·23 cites·20 claims
- 0397US9716129B1Memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·25 cites·20 claims
- 0493US7969798B2Phase change memory devices and read methods using elapsed time-based read voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 28, 2011·40 cites·7 claims
- 0592US10062840B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·8 cites·16 claims
- 0692US9991315B2Memory device including ovonic threshold switch adjusting threshold voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 5, 2018·7 cites·5 claims
- 0792US7233054B1Phase change material and non-volatile memory device using the sameSEOUL NAT UNIV IND FOUNDATION·Filed 2005·Granted Jun 19, 2007·32 cites·9 claims
- 0891US9887354B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 6, 2018·6 cites·19 claims
- 0991US7778079B2Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·26 cites·26 claims
- 1090US7701749B2Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 20, 2010·21 cites·26 claims
- 1189US10497751B2Memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·19 claims
- 1288US11183538B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 23, 2021·2 cites·20 claims
- 1386US10566529B2Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 18, 2020·3 cites·19 claims
- 1485US10644069B2Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 5, 2020·6 cites·20 claims
- 1585US10263040B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 16, 2019·4 cites·20 claims
- 1682US11201192B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·1 cites·20 claims
- 1780US10062841B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·3 cites·27 claims
- 1878US10636843B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·2 cites·18 claims
- 1976US7632456B2Phase change material for high density non-volatile memoryKOREA INST SCI & TECH·Filed 2006·Granted Dec 15, 2009·7 cites·1 claims
- 2075US11349074B2Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·19 claims
- 2175US10804466B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 13, 2020·0 cites·20 claims
- 2272US10615341B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 7, 2020·1 cites·18 claims
- 2371US10580979B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·1 cites·12 claims
- 2469US10249820B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 2, 2019·1 cites·20 claims
- 2568US10141373B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 27, 2018·1 cites·12 claims
- 2668US7851778B2Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereofKOREA INST SCI & TECH·Filed 2007·Granted Dec 14, 2010·4 cites·10 claims
- 2765US10734450B2Memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 2860US10141502B2Semiconductor memory devicesPARK IL MOK·Filed 2017·Granted Nov 27, 2018·1 cites·20 claims
- 2956US2017309683A1Memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 3054US10593874B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 17, 2020·0 cites·17 claims
- 3153US8048393B2Zeolite catalyst for removing nitrogen oxides, method for preparing the same, and method of removing nitrogen oxides using the sameHYUNDAI MOTOR CO LTD·Filed 2009·Granted Nov 1, 2011·0 cites·6 claims
- 3246US7851828B2Phase change memory cell with transparent conducting oxide for electrode contact materialKOREA INST SCI & TECH·Filed 2005·Granted Dec 14, 2010·0 cites·1 claims
- 3341US10546999B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 28, 2020·0 cites·16 claims
- 3440US2010181549A1Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide LayersKIM SONG-YI·Filed 2010·Application pending·0 cites
- 3533US2010243981A1Phase-change random access memory deviceKANG DAE-HWAN·Filed 2010·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →