Inventor · disambiguated record
Shigehisa Inoue
Also filed as: INOUE SHIGEHISA
13 granted patents·2 pending applications·148 citations·filing 2014–2020
91Inventor score
Files withSANDISK TECHNOLOGIES LLC9TOKYO ELECTRON LTD4MICRON TECHNOLOGY INC1SANDISK TECHNOLOGIES INC1
Top patents by PatentIndex Score
15 records- 0196US10141331B1Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 27, 2018·53 cites·22 claims
- 0296US9768270B2Method of selectively depositing floating gate material in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 19, 2017·24 cites·7 claims
- 0395US10748927B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 18, 2020·16 cites·20 claims
- 0494US10892267B2Three-dimensional memory device containing through-memory-level contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 12, 2021·11 cites·4 claims
- 0593US10861869B2Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 8, 2020·9 cites·9 claims
- 0691US10381372B2Selective tungsten growth for word lines of a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 13, 2019·10 cites·12 claims
- 0790US10957705B2Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 23, 2021·11 cites·12 claims
- 0889US10354859B1Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·5 cites·10 claims
- 0979US11659711B2Three-dimensional memory device including discrete charge storage elements and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 23, 2023·1 cites·5 claims
- 1076US9082783B2Semiconductor device and fabrication method thereofMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 14, 2015·5 cites·10 claims
- 1172US11075218B2Method of making a three-dimensional memory device using silicon nitride etching end point detectionSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 27, 2021·1 cites·12 claims
- 1265US9508569B2Substrate liquid processing apparatusTOKYO ELECTRON LTD·Filed 2015·Granted Nov 29, 2016·1 cites·11 claims
- 1363US9953852B2Liquid processing aparatusTOKYO ELECTRON LTD·Filed 2014·Granted Apr 24, 2018·1 cites·9 claims
- 1444US2015114560A1Substrate processing apparatus and liquid supply apparatusTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 1543US2014373877A1Liquid processing apparatus and liquid processing methodTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →