Inventor · disambiguated record
Tomohiko Shibata
Also filed as: SHIBATA TOMOHIKO
71 granted patents·8 pending applications·563 citations·filing 1997–2024
99Inventor score
Files withNGK INSULATORS LTD53IKUTA TETSUYA9SONY SEMICONDUCTOR SOLUTIONS CORP4DOWA ELECTRONICS MATERIALS CO LTD3TSUBOCHI KAZUO3
Top patents by PatentIndex Score
79 records- 0192US9006865B2Epitaxial growth substrate, semiconductor device, and epitaxial growth methodIKUTA TETSUYA·Filed 2011·Granted Apr 14, 2015·15 cites·9 claims
- 0292US6426519B1Epitaxial growth substrate and a method for producing the sameNGK INSULATORS LTD·Filed 2000·Granted Jul 30, 2002·59 cites·9 claims
- 0390US8227789B2Optical semiconductor device and method of manufacturing the sameHIRAYAMA HIDEKI·Filed 2009·Granted Jul 24, 2012·17 cites·29 claims
- 0488US8426893B2Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2010·Granted Apr 23, 2013·10 cites·14 claims
- 0588US6495894B2Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrateNGK INSULATORS LTD·Filed 2001·Granted Dec 17, 2002·49 cites·15 claims
- 0683US8847203B2Group III nitride epitaxial laminate substrateIKUTA TETSUYA·Filed 2010·Granted Sep 30, 2014·7 cites·7 claims
- 0783US7687824B2Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor deviceNGK INSULATORS LTD·Filed 2005·Granted Mar 30, 2010·8 cites·11 claims
- 0882US7033439B2Apparatus for fabricating a III-V nitride film and a method for fabricating the sameNGK INSULATORS LTD·Filed 2001·Granted Apr 25, 2006·24 cites·4 claims
- 0981US7438761B2Apparatus for fabricating a III-V nitride film and a method for fabricating the sameNGK INSULATORS LTD·Filed 2006·Granted Oct 21, 2008·6 cites·5 claims
- 1080US6534795B2Semiconductor light-emitting elementNGK INSULATORS LTD·Filed 2001·Granted Mar 18, 2003·30 cites·17 claims
- 1179US10727303B2Group III nitride epitaxial substrate and method for manufacturing the sameIKUTA TETSUYA·Filed 2012·Granted Jul 28, 2020·4 cites·7 claims
- 1279US6583468B2Semiconductor elementNGK INSULATORS LTD·Filed 2001·Granted Jun 24, 2003·17 cites·11 claims
- 1379US5936329ASurface acoustic wave device, substrate therefor, and method of manufacturing the substrateNGK INSULATORS LTD·Filed 1997·Granted Aug 10, 1999·29 cites·14 claims
- 1477US8410472B2Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2009·Granted Apr 2, 2013·6 cites·6 claims
- 1577US7815235B2Tonneau cover unitHAYASHI TELEMPU KK·Filed 2008·Granted Oct 19, 2010·17 cites·28 claims
- 1676US6989202B2Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayerNGK INSULATORS LTD·Filed 2004·Granted Jan 24, 2006·13 cites·5 claims
- 1776US6869702B2Substrate for epitaxial growthNGK INSULATORS LTD·Filed 2003·Granted Mar 22, 2005·17 cites·10 claims
- 1874US7632741B2Method for forming AlGaN crystal layerNGK INSULATORS LTD·Filed 2008·Granted Dec 15, 2009·4 cites·16 claims
- 1972USRE40485ESemiconductor light-emitting elementNGK INSULATORS LTD·Filed 2005·Granted Sep 9, 2008·4 cites·13 claims
- 2072USRE40163ESemiconductor light-emitting elementNGK INSULATORS LTD·Filed 2005·Granted Mar 25, 2008·4 cites·19 claims
- 2172US6649493B2Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayerNGK INSULATORS LTD·Filed 2001·Granted Nov 18, 2003·11 cites·11 claims
- 2272US6342748B1Surface acoustic wave device, substrate therefor and method of manufacturing the substrateNGK INSULATORS LTD·Filed 1999·Granted Jan 29, 2002·24 cites·19 claims
- 2369US12335642B2Solid-state imaging device and electronic deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2024·Granted Jun 17, 2025·0 cites·10 claims
- 2469US9272601B2Vehicle air conditioner caseHARA JUNICHIRO·Filed 2011·Granted Mar 1, 2016·2 cites·5 claims
- 2569US6707076B2Semiconductor elementNGK INSULATORS LTD·Filed 2003·Granted Mar 16, 2004·9 cites·7 claims
- 2668US6770914B2III nitride semiconductor substrate for ELONGK INSULATORS LTD·Filed 2002·Granted Aug 3, 2004·11 cites·15 claims
- 2767US6709703B2Method for fabricating a III-V nitride film and an apparatus for fabricating the sameNGK INSULATORS LTD·Filed 2001·Granted Mar 23, 2004·9 cites·6 claims
- 2865US7955437B2Apparatus for fabricating a III-V nitride filmNGK INSULATORS LTD·Filed 2003·Granted Jun 7, 2011·8 cites·10 claims
- 2965US6573535B2Semiconductor light-emitting elementNGK INSULATORS LTD·Filed 2001·Granted Jun 3, 2003·12 cites·11 claims
- 3064US7445672B2Method of forming group-III nitride crystal, layered structure and epitaxial substrateNGK INSULATORS LTD·Filed 2006·Granted Nov 4, 2008·1 cites·11 claims
- 3164US6183555B1Surface acoustic wave device, substrate therefor, and method of manufacturing the substrateNGK INSULATORS LTD·Filed 1999·Granted Feb 6, 2001·16 cites·7 claims
- 3263US10388517B2Epitaxial substrate for electronic device and method of producing the sameIKUTA TETSUYA·Filed 2012·Granted Aug 20, 2019·1 cites·3 claims
- 3363US7771849B2Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growthNGK INSULATORS LTD·Filed 2009·Granted Aug 10, 2010·1 cites·6 claims
- 3463US6597023B2Semiconductor light-detecting elementNGK INSULATORS LTD·Filed 2002·Granted Jul 22, 2003·8 cites·13 claims
- 3562US9470241B2Centrifugal blower and vehicle air conditioner provided with the sameKOBAYASHI TAKAYUKI·Filed 2012·Granted Oct 18, 2016·1 cites·6 claims
- 3662US7713847B2Method for forming AlGaN crystal layerNGK INSULATORS LTD·Filed 2008·Granted May 11, 2010·1 cites·9 claims
- 3762US6765244B2III nitride film and a III nitride multilayerNGK INSULATORS LTD·Filed 2002·Granted Jul 20, 2004·7 cites·12 claims
- 3860US6554896B1Epitaxial growth substrate and a method for producing the sameNGK INSULATORS LTD·Filed 2000·Granted Apr 29, 2003·7 cites·10 claims
- 3959US6703649B2Semiconductor elementNGK INSULATORS LTD·Filed 2002·Granted Mar 9, 2004·6 cites·15 claims
- 4057US6275123B1Surface acoustic wave matched filter with dispersive substrate and saw group velocity based output electrode designNGK INSULATORS LTD·Filed 1999·Granted Aug 14, 2001·13 cites·7 claims
- 4155US8039130B2Method of forming group-III nitride crystal, layered structure and epitaxial substrateNGK INSULATORS LTD·Filed 2008·Granted Oct 18, 2011·0 cites·2 claims
- 4255US6759715B2Epitaxial base substrate and epitaxial substrateNGK INSULATORS LTD·Filed 2002·Granted Jul 6, 2004·4 cites·19 claims
- 4355US6749957B2Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride elementNGK INSULATORS LTD·Filed 2002·Granted Jun 15, 2004·4 cites·16 claims
- 4455US6706620B2Method for fabricating a nitride filmNGK INSULATORS LTD·Filed 2002·Granted Mar 16, 2004·4 cites·10 claims
- 4555US6623877B2III nitride epitaxial wafer and usage of the sameNGK INSULATORS LTD·Filed 2001·Granted Sep 23, 2003·4 cites·10 claims
- 4655US6492191B2Method for manufacturing an A1xGayInzN film using a metal film for heat radiationNGK INSULATORS LTD·Filed 2001·Granted Dec 10, 2002·5 cites·5 claims
- 4754US12028629B2Solid-state imaging device and electronic deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Granted Jul 2, 2024·0 cites·14 claims
- 4854US6865174B1Code division multiple access communication systemTSUBOCHI KAZUO·Filed 1999·Granted Mar 8, 2005·21 cites·24 claims
- 4954US6835965B2Semiconductor light-emitting devicesNGK INSULATORS LTD·Filed 2003·Granted Dec 28, 2004·4 cites·17 claims
- 5054US6781164B2Semiconductor elementNGK INSULATORS LTD·Filed 2003·Granted Aug 24, 2004·3 cites·7 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →