Inventor · disambiguated record
Mizue Ishikawa
Also filed as: ISHIKAWA MIZUE
38 granted patents·6 pending applications·184 citations·filing 2008–2019
97Inventor score
Top patents by PatentIndex Score
44 records- 0198US8357962B2Spin transistor and method of manufacturing the sameTOSHIBA KK·Filed 2010·Granted Jan 22, 2013·49 cites·16 claims
- 0290US7973351B2Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Jul 5, 2011·16 cites·12 claims
- 0390US7709867B2Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloyTOSHIBA KK·Filed 2008·Granted May 4, 2010·14 cites·3 claims
- 0489US9520171B2Resistive change memoryTOSHIBA KK·Filed 2015·Granted Dec 13, 2016·10 cites·12 claims
- 0588US8026561B2Spin MOSFET and reconfigurable logic circuitTOSHIBA KK·Filed 2010·Granted Sep 27, 2011·7 cites·11 claims
- 0687US8139403B2Spin memory and spin transistorINOKUCHI TOMOAKI·Filed 2010·Granted Mar 20, 2012·10 cites·13 claims
- 0786US7943974B2Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloyTOSHIBA KK·Filed 2010·Granted May 17, 2011·7 cites·3 claims
- 0883US8637946B2Spin MOSFET and reconfigurable logic circuitSAITO YOSHIAKI·Filed 2011·Granted Jan 28, 2014·4 cites·13 claims
- 0982US8154916B2Nonvolatile memory circuit using spin MOS transistorsSUGIYAMA HIDEYUKI·Filed 2010·Granted Apr 10, 2012·8 cites·5 claims
- 1082US7956395B2Spin transistor and magnetic memoryTOSHIBA KK·Filed 2008·Granted Jun 7, 2011·9 cites·27 claims
- 1180US9570137B2Magnetic memory and semiconductor-integrated-circuitTOSHIBA KK·Filed 2016·Granted Feb 14, 2017·5 cites·20 claims
- 1280US9230625B2Magnetic memory, spin element, and spin MOS transistorTOSHIBA KK·Filed 2014·Granted Jan 5, 2016·4 cites·20 claims
- 1380US8335059B2Tunneling magnetoresistive effect element and spin MOS field-effectISHIKAWA MIZUE·Filed 2012·Granted Dec 18, 2012·5 cites·4 claims
- 1479US8243400B2Tunneling magnetoresistive effect element and spin MOS field-effect transistorISHIKAWA MIZUE·Filed 2008·Granted Aug 14, 2012·7 cites·3 claims
- 1574US8330196B2Semiconductor device and method of manufacturing the sameMARUKAME TAKAO·Filed 2012·Granted Dec 11, 2012·4 cites·20 claims
- 1673US8576601B2Content addressable memoryMARUKAME TAKAO·Filed 2012·Granted Nov 5, 2013·5 cites·18 claims
- 1770US9112131B2Spin MOSFET and reconfigurable logic circuitTOSHIBA KK·Filed 2013·Granted Aug 18, 2015·1 cites·8 claims
- 1868US10490736B2Magnetic memoryTOSHIBA KK·Filed 2018·Granted Nov 26, 2019·2 cites·17 claims
- 1968US7796423B2Reconfigurable logic circuitTOSHIBA KK·Filed 2008·Granted Sep 14, 2010·5 cites·16 claims
- 2066US8487359B2Spin MOSFET and reconfigurable logic circuit using the spin MOSFETSAITO YOSHIAKI·Filed 2009·Granted Jul 16, 2013·3 cites·20 claims
- 2162US8405443B2Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuitSUGIYAMA HIDEYUKI·Filed 2012·Granted Mar 26, 2013·2 cites·16 claims
- 2259US10374150B2Magnetic memory deviceTOSHIBA KK·Filed 2018·Granted Aug 6, 2019·1 cites·20 claims
- 2359US10360960B2Magnetic memory deviceTOSHIBA KK·Filed 2017·Granted Jul 23, 2019·1 cites·19 claims
- 2459US10262711B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Apr 16, 2019·1 cites·20 claims
- 2557US8618590B2Spin transistor, integrated circuit, and magnetic memoryINOKUCHI TOMOAKI·Filed 2009·Granted Dec 31, 2013·1 cites·11 claims
- 2656US10453513B2Magnetic memory deviceTOSHIBA KK·Filed 2018·Granted Oct 22, 2019·0 cites·20 claims
- 2756US8111087B2Semiconductor integrated circuitINOKUCHI TOMOAKI·Filed 2009·Granted Feb 7, 2012·3 cites·22 claims
- 2852US9536583B2Magnetic memory, spin element, and spin MOS transistorTOSHIBA KK·Filed 2015·Granted Jan 3, 2017·0 cites·20 claims
- 2950US2014291744A1Spin fet and magnetoresistive elementTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3049US2009057654A1Spin fet and magnetoresistive elementSAITO YOSHIAKI·Filed 2008·Application pending·0 cites
- 3148US8981436B2Stacked structure, spin transistor, and reconfigurable logic circuitTOSHIBA KK·Filed 2013·Granted Mar 17, 2015·0 cites·16 claims
- 3248US8847288B2Spin transistors and memoryTOSHIBA KK·Filed 2013·Granted Sep 30, 2014·0 cites·20 claims
- 3344US2018145247A1Magnetic memoryTOSHIBA KK·Filed 2018·Application pending·0 cites
- 3443US10734053B2Magnetic memory deviceTOSHIBA KK·Filed 2019·Granted Aug 4, 2020·0 cites·17 claims
- 3543US2018040807A1Magnetic memoryTOSHIBA KK·Filed 2017·Application pending·0 cites
- 3642US9112139B2Spin transistor and memoryINOKUCHI TOMOAKI·Filed 2012·Granted Aug 18, 2015·0 cites·15 claims
- 3742US8385114B2Nonvolatile memory circuit using spin MOS transistorsTOSHIBA KK·Filed 2012·Granted Feb 26, 2013·0 cites·5 claims
- 3841US8958239B2Magnetic memory element, magnetic memory device, spin transistor, and integrated circuitINOKUCHI TOMOAKI·Filed 2012·Granted Feb 17, 2015·0 cites·17 claims
- 3940US10283697B2Magnetic memory including a magnetoresistive device that includes a first magnetic layer having a fixed magnetization and a second magnetic layer having a changeable magnetizationTOSHIBA KK·Filed 2016·Granted May 7, 2019·0 cites·31 claims
- 4040US9842635B2Spin transistor memoryTOSHIBA KK·Filed 2016·Granted Dec 12, 2017·0 cites·19 claims
- 4138US8373437B2Look-up table circuits and field programmable gate arrayTOSHIBA KK·Filed 2011·Granted Feb 12, 2013·0 cites·16 claims
- 4236US2019051818A1Magnetic memory element and magnetic memory deviceTOSHIBA KK·Filed 2018·Application pending·0 cites
- 4334US8611143B2Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate arraySUGIYAMA HIDEYUKI·Filed 2012·Granted Dec 17, 2013·0 cites·14 claims
- 4434US2015311305A1Spin mosfetTOSHIBA KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →