Inventor · disambiguated record
Zhitang Song
Also filed as: SONG ZHITANG
21 granted patents·10 pending applications·42 citations·filing 2004–2023
91Inventor score
Files withSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS8SHANGHAI INST MICROSYS & INF5SHANGHAI XINANNA ELECTRONIC TECH CO LTD3ZHANG CHAO3SILICON STORAGE TECH INC2
Top patents by PatentIndex Score
31 records- 0187US8476085B1Method of fabricating dual trench isolated epitaxial diode arrayZHANG CHAO·Filed 2011·Granted Jul 2, 2013·14 cites·13 claims
- 0280US8947924B2Data readout circuit of phase change memoryLI XI·Filed 2011·Granted Feb 3, 2015·11 cites·9 claims
- 0374US12316103B2Electrostatic discharge (ESD) protection circuitsZHANG GUOBIAO·Filed 2023·Granted May 27, 2025·0 cites·4 claims
- 0468US9276202B2Phase-change storage unit containing TiSiN material layer and method for preparing the sameSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Mar 1, 2016·2 cites·12 claims
- 0568US8722455B2Phase change memory structure having low-K dielectric heat-insulating material and fabrication method thereofSONG ZHITANG·Filed 2011·Granted May 13, 2014·5 cites·6 claims
- 0667US11824347B2Electrostatic discharge (ESD) protection circuitsUNIV SOUTHERN SCI & TECH·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 0764US12439590B2Memory deviceZHANG GUOBIAO·Filed 2022·Granted Oct 7, 2025·0 cites·11 claims
- 0863US7351613B2Method of trimming semiconductor elements with electrical resistance feedbackSILICON STORAGE TECH INC·Filed 2004·Granted Apr 1, 2008·7 cites·12 claims
- 0961US8586405B2Semiconductor device manufacturing methodZHANG CHAO·Filed 2012·Granted Nov 19, 2013·1 cites·16 claims
- 1058US9334583B2Method of preventing auto-doping during epitaxial layer growth by cleaning the reaction chamber with hydrogen chlorideZHANG CHAO·Filed 2011·Granted May 10, 2016·1 cites·10 claims
- 1155US8920684B2Al-Sb-Te phase change material used for phase change memory and fabrication method thereofPENG CHENG·Filed 2011·Granted Dec 30, 2014·0 cites·4 claims
- 1254US7790518B2Method of trimming semiconductor elements with electrical resistance feedbackSILICON STORAGE TECH INC·Filed 2008·Granted Sep 7, 2010·0 cites·13 claims
- 1353US10679697B2Read circuit of storage class memory with a read reference circuit, having same bit line parasitic parameters and same read transmission gate parasitic parameters as memorySHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2016·Granted Jun 9, 2020·1 cites·14 claims
- 1453US10604662B2Film-forming silica sol, method of preparing the same, and application of the sameSHANGHAI XINANNA ELECTRONIC TECH CO LTD·Filed 2016·Granted Mar 31, 2020·0 cites·7 claims
- 1548US2014192592A1Sb-te-ti phase-change memory material and ti-sb2te3 phase-change memory materialSHANGHAI INST MICROSYS & INF·Filed 2012·Application pending·0 cites
- 1646US2025040151A1Switch device and memorySHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2022·Application pending·0 cites
- 1743US2023276638A1Selector material, selector unit and preparation method thereof, and memory structureSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Application pending·0 cites
- 1842US2014291597A1High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method ThereofSHANGHAI INST MICROSYS & INF·Filed 2012·Application pending·0 cites
- 1942US2022328761A1Phase change material, phase change memory cell and preparation method thereforSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Application pending·0 cites
- 2037US12219888B2Phase change memory and method for making the sameSHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECH CHINESE ACADEMY OF SCIENCE·Filed 2019·Granted Feb 4, 2025·0 cites·17 claims
- 2137US10411187B2Phase change material for phase change memory and preparation method thereforSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2016·Granted Sep 10, 2019·0 cites·10 claims
- 2237US2014008567A1Chemical mechanical polishing slurryWANG LIANGYONG·Filed 2011·Application pending·0 cites
- 2336US10276234B2Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change memory materialSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2015·Granted Apr 30, 2019·0 cites·1 claims
- 2434US2018269388A1Phase change memory unit and preparation method thereforSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Application pending·0 cites
- 2533US2013292629A1Phase change memory cell and fabrication method thereofLIU BO·Filed 2011·Application pending·0 cites
- 2632US10066128B2Method for preparing an aluminum oxide polishing solutionSHANGHAI XINANNA ELECTRONIC TECH CO LTD·Filed 2016·Granted Sep 4, 2018·0 cites·7 claims
- 2732US9362493B2Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Jun 7, 2016·0 cites·6 claims
- 2831US2015207070A1Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application ThereofSHANGHAI INST MICROSYS & INF·Filed 2012·Application pending·0 cites
- 2928US10482955B2Storage array, and storage chip and method for storing logical relationship of objectsSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2015·Granted Nov 19, 2019·0 cites·11 claims
- 3024US11568931B2Read-out circuit and read-out method for three-dimensional memorySHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECH CHINESE ACADEMY·Filed 2017·Granted Jan 31, 2023·0 cites·23 claims
- 3123US2017349788A1Polydisperse large-particle-size silica sol and method of preparing the sameSHANGHAI XINANNA ELECTRONIC TECH CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →