Inventor · disambiguated record
Maosheng Hao
Also filed as: HAO MAOSHENG
3 granted patents·41 citations·filing 2001–2014
69Inventor score
Technology areasH10P
Top patents by PatentIndex Score
3 records- 0184US6645885B2Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)UNIV SINGAPORE·Filed 2001·Granted Nov 11, 2003·31 cites·10 claims
- 0265US6861271B2Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)UNIV SINGAPORE·Filed 2003·Granted Mar 1, 2005·9 cites·10 claims
- 0352US10230018B2Substrate used for III-V-nitride growth and manufacturing method thereofCHIP FOUNDATION TECH LTD·Filed 2014·Granted Mar 12, 2019·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →