Inventor · disambiguated record
Jingxun Fang
Also filed as: FANG JINGXUN
7 granted patents·3 pending applications·12 citations·filing 2012–2024
76Inventor score
Files withSHANGHAI HUALI MICROELECT CORP5SHANGHAI HUALI INTEGRATED CIRCUIT CORP3FANG JINGXUN1SHANGHAI HUALI MICROELECTRONIC1
Top patents by PatentIndex Score
10 records- 0183US9449872B1Method for forming cobalt barrier layer and metal interconnection processSHANGHAI HUALI MICROELECT CORP·Filed 2015·Granted Sep 20, 2016·6 cites·14 claims
- 0266US10651285B2Method for avoiding IL regrown in a HKMG processSHANGHAI HUALI MICROELECT CORP·Filed 2017·Granted May 12, 2020·1 cites·20 claims
- 0363US8645879B2Algorithm of Cu interconnect dummy insertingSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Feb 4, 2014·2 cites·7 claims
- 0461US8987101B2Method of forming strained source and drain regions in a P-type finFET structureSHANGHAI HUALI MICROELECT CORP·Filed 2013·Granted Mar 24, 2015·1 cites·9 claims
- 0559US8772157B2Method of forming Cu interconnectsFANG JINGXUN·Filed 2012·Granted Jul 8, 2014·2 cites·9 claims
- 0657US2023332328A1Reaction Device for Improving Epitaxial Growth UniformitySHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Application pending·0 cites
- 0756US2025069949A1Method for reducing resistance of contactSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 0848US12295153B2Method for manufacturing metal gate of PMOSSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted May 6, 2025·0 cites·16 claims
- 0937US8673768B2Fabrication method for improving surface planarity after tungsten chemical mechanical polishingSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Mar 18, 2014·0 cites·7 claims
- 1037US2014322879A1Method of forming sigma-shaped trenchSHANGHAI HUALI MICROELECTRONIC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →