Inventor · disambiguated record
Paul C. F. Tong
Also filed as: TONG PAUL C F
10 granted patents·367 citations·filing 1992–2004
92Inventor score
Top patents by PatentIndex Score
10 records- 0189US6867957B1Stacked-NMOS-triggered SCR device for ESD-protectionPERICOM SEMICONDUCTOR CORP·Filed 2002·Granted Mar 15, 2005·54 cites·19 claims
- 0289US6756834B1Direct power-to-ground ESD protection with an electrostatic common-discharge linePERICOM SEMICONDUCTOR CORP·Filed 2003·Granted Jun 29, 2004·65 cites·20 claims
- 0385US5719427AAvalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structuresPERICOM SEMICONDUCTOR CORP·Filed 1997·Granted Feb 17, 1998·81 cites·18 claims
- 0484US6989979B1Active ESD shunt with transistor feedback to reduce latch-up susceptibilityPERICOM SEMICONDUCTOR CORP·Filed 2003·Granted Jan 24, 2006·38 cites·17 claims
- 0584US6724592B1Substrate-triggering of ESD-protection devicePERICOM SEMICONDUCTOR CORP·Filed 2002·Granted Apr 20, 2004·39 cites·20 claims
- 0680US6738242B1ESD-isolation circuit driving gate of bus-switch transistor during ESD pulse between two I/O pinsPERICOM SEMICONDUCTOR CORP·Filed 2002·Granted May 18, 2004·31 cites·20 claims
- 0776US6757147B1Pin-to-pin ESD-protection structure having cross-pin activationPERICOM SEMICONDUCTOR CORP·Filed 2002·Granted Jun 29, 2004·23 cites·20 claims
- 0871US6965253B1Reduced-capacitance bus switch in isolated P-well shorted to source and drain during switchingPERICOM SEMICONDUCTOR CORP·Filed 2004·Granted Nov 15, 2005·17 cites·19 claims
- 0945US5336625ABiCMOS process with low base recombination current bipolar transistorsSAMSUNG SEMICONDUCTOR CORP·Filed 1993·Granted Aug 9, 1994·14 cites·16 claims
- 1032US5304501ABiCMOS process with low base recombination current bipolar transistorsSAMSUNG SEMICONDUCTOR CORP·Filed 1992·Granted Apr 19, 1994·5 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →