Inventor · disambiguated record
Motohiro Toyonaga
Also filed as: TOYONAGA MOTOHIRO
3 granted patents·0 citations·filing 2014–2017
43Inventor score
Files withROHM CO LTD3
Top patents by PatentIndex Score
3 records- 0144US9190513B2N-channel double diffusion MOS transistor with P-type buried layer under N-type drift layer, and semiconductor composite deviceROHM CO LTD·Filed 2014·Granted Nov 17, 2015·0 cites·18 claims
- 0242US9812565B2N-channel double diffusion MOS transistor with p-type buried layer underneath n-type drift and drain layers, and semiconductor composite deviceROHM CO LTD·Filed 2015·Granted Nov 7, 2017·0 cites·14 claims
- 0340US10070530B2Electronic component and manufacturing method thereofROHM CO LTD·Filed 2017·Granted Sep 4, 2018·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →