Inventor · disambiguated record
Xin Zhang
Also filed as: ZHANG XIN · Zhang xin-gui
12 granted patents·5 pending applications·230 citations·filing 1997–2025
90Inventor score
Files withCHARTERED SEMICONDUCTOR MFG4LAM RES CORP3SAMSUNG ELECTRONICS CO LTD2SEMICONDUCTOR MFG INT SHANGHAI CORP2APPLIED MATERIALS INC1
Top patents by PatentIndex Score
17 records- 0198US9779956B1Hydrogen activated atomic layer etchingLAM RES CORP·Filed 2017·Granted Oct 3, 2017·109 cites·18 claims
- 0280US10403787B2Optoelectronic device comprising three-dimensional semiconductor structures in an axial configurationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 3, 2019·3 cites·13 claims
- 0380US6121164AMethod for forming low compressive stress fluorinated ozone/TEOS oxide filmAPPLIED MATERIALS INC·Filed 1997·Granted Sep 19, 2000·59 cites·13 claims
- 0468US10134600B2Dielectric contact etchLAM RES CORP·Filed 2017·Granted Nov 20, 2018·1 cites·20 claims
- 0568US9236435B2Tunneling field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·2 cites·18 claims
- 0661US5925501ADark CF4 flashCHARTERED SEMICONDUCTOR MFG·Filed 1997·Granted Jul 20, 1999·27 cites·27 claims
- 0757US11527526B2Semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Dec 13, 2022·0 cites·11 claims
- 0857US2025276279A1Sorbent coated carbon fibers and their modules for reducing carbon dioxide using electrically driven temperature swing adsorption systemGEORGIA TECH RES INST·Filed 2025·Application pending·0 cites
- 0951US10903201B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Jan 26, 2021·0 cites·7 claims
- 1051US2023268192A1In-situ hydrocarbon-based layer for non-conformal passivation of partially etched structuresLAM RES CORP·Filed 2022·Application pending·0 cites
- 1149US12094875B2Nitride-based semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 1248US6303451B1Method for forming a transistor within an integrated circuitCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Oct 16, 2001·16 cites·25 claims
- 1347US2022139709A1Confined gallium nitride epitaxial layersIBM·Filed 2020·Application pending·0 cites
- 1443US5946589AElimination of void formation in aluminum based interconnect structuresCHARTERED SEMICONDUCTOR MFG·Filed 1997·Granted Aug 31, 1999·13 cites·11 claims
- 1543US2015200289A1Tunneling field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1641US2021193805A1Lateral transistor with lateral conductive field plate over a field plate positioning layerMONOLITHIC POWER SYSTEMS INC·Filed 2019·Application pending·0 cites
- 1727US6548231B1Enhanced passivation scheme for post metal etch clean processCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 15, 2003·0 cites·21 claims
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