Inventor · disambiguated record
Paul Rudeck
Also filed as: RUDECK PAUL · RUDECK PAUL J
46 granted patents·6 pending applications·873 citations·filing 1988–2012
99Inventor score
Top patents by PatentIndex Score
52 records- 0195US6849501B2Methods for fabricating an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 1, 2005·60 cites·24 claims
- 0294US7212435B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2004·Granted May 1, 2007·68 cites·16 claims
- 0394US6384447B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted May 7, 2002·55 cites·25 claims
- 0494US6272047B1Flash memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 7, 2001·72 cites·22 claims
- 0593US7272039B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 18, 2007·27 cites·14 claims
- 0692US6449189B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 10, 2002·41 cites·27 claims
- 0791US6680508B1Vertical floating gate transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 20, 2004·45 cites·7 claims
- 0891US6445619B1Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·38 cites·28 claims
- 0989US4893163AAlignment mark system for electron beam/optical mixed lithographyIBM·Filed 1988·Granted Jan 9, 1990·76 cites·4 claims
- 1088US6657250B1Vertical flash memory cell with buried source railMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 2, 2003·37 cites·15 claims
- 1187US6798699B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 28, 2004·37 cites·38 claims
- 1286US7257024B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 14, 2007·14 cites·17 claims
- 1386US6563741B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·34 cites·36 claims
- 1483US6461915B1Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 8, 2002·34 cites·31 claims
- 1580US6762093B2High coupling floating gate transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 13, 2004·20 cites·6 claims
- 1680US6713350B2Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stackMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 30, 2004·18 cites·42 claims
- 1778US7932557B2Semiconductor contact deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 26, 2011·6 cites·31 claims
- 1872US6881628B2Vertical flash memory cell with buried source railMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 19, 2005·14 cites·6 claims
- 1971US6297092B1Method and structure for an oxide layer overlaying an oxidation-resistant layerMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 2, 2001·23 cites·23 claims
- 2070US7294549B2Vertical floating gate transistorMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 13, 2007·3 cites·20 claims
- 2170US7148547B2Semiconductor contact deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 12, 2006·12 cites·27 claims
- 2270US6916707B2High coupling floating gate transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 12, 2005·11 cites·17 claims
- 2369US6756268B2Modified source/drain re-oxidation method and systemMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 29, 2004·8 cites·35 claims
- 2469US6587376B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 1, 2003·9 cites·33 claims
- 2568US6921696B2Vertical floating gate transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 26, 2005·10 cites·9 claims
- 2668US6774431B2High coupling floating gate transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 10, 2004·10 cites·17 claims
- 2767US7015098B2Methods and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 21, 2006·7 cites·28 claims
- 2867US6803624B2Programmable memory devices supported by semiconductive substratesMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 12, 2004·9 cites·114 claims
- 2966US7420240B2Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stackMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 2, 2008·8 cites·16 claims
- 3066US7294567B2Semiconductor contact device and methodMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 13, 2007·10 cites·44 claims
- 3166US7115458B2Gate coupling in floating-gate memory cellsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 3, 2006·10 cites·25 claims
- 3264US6434045B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 13, 2002·7 cites·27 claims
- 3362US6611019B2Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 26, 2003·6 cites·28 claims
- 3460US6777291B2Methods of forming programmable memory devices comprising tungstenMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 17, 2004·6 cites·35 claims
- 3559US6577537B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 10, 2003·5 cites·50 claims
- 3658US7091549B2Programmable memory devices supported by semiconductor substratesMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 15, 2006·5 cites·17 claims
- 3758US6445620B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·5 cites·24 claims
- 3854US8304322B2Methods of filling isolation trenches for semiconductor devices and resulting structuresRUDECK PAUL J·Filed 2006·Granted Nov 6, 2012·1 cites·13 claims
- 3954US7015111B2Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 21, 2006·3 cites·15 claims
- 4053US6653683B2Method and structure for an oxide layer overlying an oxidation-resistant layerMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 25, 2003·4 cites·3 claims
- 4152US7429514B2Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 30, 2008·0 cites·20 claims
- 4251US6873005B2Programmable memory devices supported by semiconductor substratesMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 29, 2005·3 cites·16 claims
- 4350US6566195B2Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2002·Granted May 20, 2003·2 cites·32 claims
- 4447US2006267070A1Gate coupling in floating-gate memory cellsMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 4546US2005272203A1Modified source/drain re-oxidation method and systemRUDECK PAUL J·Filed 2005·Application pending·0 cites
- 4645US7037860B2Modified source/drain re-oxidation method and systemMICRON TECHNOLOGY INC·Filed 2004·Granted May 2, 2006·0 cites·32 claims
- 4743US7271435B2Modified source/drain re-oxidation method and systemMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 18, 2007·0 cites·12 claims
- 4843US2013009276A1Methods of filling isolation trenches for semiconductor devices and resulting structuresRUDECK PAUL J·Filed 2012·Application pending·0 cites
- 4941US2002096707A1Modified source/drain re-oxidation method and systemFiled 2001·Application pending·0 cites
- 5040US6608346B2Method and structure for an improved floating gate memory cellMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 19, 2003·0 cites·23 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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