Inventor · disambiguated record
Kang-Jay Hsia
Also filed as: HSIA KANG-JAY
9 granted patents·2 pending applications·103 citations·filing 1998–2013
88Inventor score
Top patents by PatentIndex Score
11 records- 0192US8154005B2Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillarsHSIA KANG-JAY·Filed 2008·Granted Apr 10, 2012·23 cites·17 claims
- 0290US8633105B2Method of fabricating a self-aligning damascene memory structureSANDISK 3D LLC·Filed 2013·Granted Jan 21, 2014·9 cites·18 claims
- 0388US7629247B2Method of fabricating a self-aligning damascene memory structureSANDISK 3D LLC·Filed 2007·Granted Dec 8, 2009·14 cites·26 claims
- 0475US9082786B2Method of fabricating a self-aligning damascene memory structureSANDISK 3D LLC·Filed 2013·Granted Jul 14, 2015·2 cites·20 claims
- 0575US8389399B2Method of fabricating a self-aligning damascene memory structureHSIA KANG-JAY·Filed 2009·Granted Mar 5, 2013·5 cites·33 claims
- 0673US7927990B2Forming complimentary metal features using conformal insulator layerSANDISK 3D LLC·Filed 2007·Granted Apr 19, 2011·6 cites·23 claims
- 0760US6372520B1Sonic assisted strengthening of gate oxidesLSI LOGIC CORP·Filed 1998·Granted Apr 16, 2002·26 cites·20 claims
- 0850US6211051B1Reduction of plasma damage at contact etch in MOS integrated circuitsLSI LOGIC CORP·Filed 1999·Granted Apr 3, 2001·18 cites·17 claims
- 0950US2014272577A1Methods and apparatus for high capacity anodes for lithium batteriesSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 1048US8748859B2Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillarsHSIA KANG-JAY·Filed 2012·Granted Jun 10, 2014·0 cites·18 claims
- 1146US2014272576A1Methods and apparatus for high capacity anodes for lithium batteriesSANDISK 3D LLC·Filed 2013·Application pending·0 cites
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