Inventor · disambiguated record
Reinhard Stengl
Also filed as: STENGL REINHARD · STENGL REINHARD J · STENGL REINHARD JOHANNES
69 granted patents·2 pending applications·2,098 citations·filing 1985–2010
99Inventor score
Top patents by PatentIndex Score
71 records- 0198US5627092ADeep trench dram process on SOI for low leakage DRAM cellSIEMENS AG·Filed 1994·Granted May 6, 1997·257 cites·17 claims
- 0297US5994746AMemory cell configuration and method for its fabricationSIEMENS AG·Filed 1999·Granted Nov 30, 1999·191 cites·13 claims
- 0393US6018174ABottle-shaped trench capacitor with epi buried layerSIEMENS AG·Filed 1998·Granted Jan 25, 2000·114 cites·10 claims
- 0492US5827765ABuried-strap formation in a dram trench capacitorSIEMENS AG·Filed 1996·Granted Oct 27, 1998·81 cites·26 claims
- 0592US4883215AMethod for bubble-free bonding of silicon wafersUNIV DUKE·Filed 1988·Granted Nov 28, 1989·110 cites·32 claims
- 0690US5945704ATrench capacitor with epi buried layerSIEMENS AG·Filed 1998·Granted Aug 31, 1999·86 cites·10 claims
- 0790US5670805AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Sep 23, 1997·59 cites·1 claims
- 0889US6215140B1Electrically programmable non-volatile memory cell configurationSIEMENS AG·Filed 1999·Granted Apr 10, 2001·64 cites·29 claims
- 0987US5113237APlanar pn-junction of high electric strengthSIEMENS AG·Filed 1991·Granted May 12, 1992·74 cites·3 claims
- 1085US5543348AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Aug 6, 1996·47 cites·15 claims
- 1183US5804499APrevention of abnormal WSix oxidation by in-situ amorphous silicon depositionSIEMENS AG·Filed 1996·Granted Sep 8, 1998·53 cites·5 claims
- 1283US5432120AMethod for producing a laterally limited single-crystal region with selective epitaxy and the employment thereof for manufacturing a bipolar transistor as well as a MOS transistorSIEMENS AG·Filed 1993·Granted Jul 11, 1995·88 cites·16 claims
- 1379US7719088B2High-frequency bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 18, 2010·7 cites·12 claims
- 1479US7420228B2Bipolar transistor comprising carbon-doped semiconductorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 2, 2008·8 cites·2 claims
- 1579US7105415B2Method for the production of a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 12, 2006·8 cites·10 claims
- 1679US5792685AThree-dimensional device layout having a trench capacitorSIEMENS AG·Filed 1996·Granted Aug 11, 1998·39 cites·1 claims
- 1779US5674769AProcess for forming deep trench DRAMs with sub-groundrule gatesSIEMENS AG·Filed 1996·Granted Oct 7, 1997·39 cites·24 claims
- 1877US5844266ABuried strap formation in a DRAM trench capacitorSIEMENS AG·Filed 1997·Granted Dec 1, 1998·32 cites·5 claims
- 1976US4672738AMethod for the manufacture of a pn junction with high breakdown voltageSIEMENS AG·Filed 1985·Granted Jun 16, 1987·48 cites·10 claims
- 2075US7285470B2Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 23, 2007·6 cites·5 claims
- 2175US5893735AThree-dimensional device layout with sub-groundrule featuresSIEMENS AG·Filed 1996·Granted Apr 13, 1999·34 cites·1 claims
- 2274US6995416B2Memory device for storing electrical charge and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 7, 2006·18 cites·43 claims
- 2374US6040995AMethod of operating a storage cell arrangementSIEMENS AG·Filed 1997·Granted Mar 21, 2000·35 cites·4 claims
- 2474US5188977AMethod for manufacturing an electrically conductive tip composed of a doped semiconductor materialSIEMENS AG·Filed 1991·Granted Feb 23, 1993·59 cites·11 claims
- 2572US7872349B2Integrated coolant circuit arrangement, operating method and production methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 18, 2011·3 cites·15 claims
- 2672US6127220AManufacturing method for a capacitor in an integrated storage circuitSIEMENS AG·Filed 1999·Granted Oct 3, 2000·29 cites·10 claims
- 2770US6468348B1Method of producing an open formINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 22, 2002·7 cites·9 claims
- 2869US5960318ABorderless contact etch process with sidewall spacer and selective isotropic etch processSIEMENS AG·Filed 1995·Granted Sep 28, 1999·39 cites·20 claims
- 2968US8003475B2Method for fabricating a transistor structureINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 23, 2011·2 cites·10 claims
- 3068US7968972B2High-frequency bipolar transistor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jun 28, 2011·2 cites·8 claims
- 3168US5306647AMethod for manufacturing a solar cell from a substrate waferSIEMENS AG·Filed 1992·Granted Apr 26, 1994·42 cites·20 claims
- 3267US5326718AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1992·Granted Jul 5, 1994·33 cites·7 claims
- 3366US6635545B2Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 21, 2003·13 cites·10 claims
- 3464US6614575B1Optical structure and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 2, 2003·10 cites·6 claims
- 3564US6614066B2Ferroelectric transistor and memory cell configuration with the ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·12 cites·8 claims
- 3662US7371650B2Method for producing a transistor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 13, 2008·7 cites·7 claims
- 3762US5360759AMethod for manufacturing a component with porous siliconSIEMENS AG·Filed 1993·Granted Nov 1, 1994·34 cites·9 claims
- 3861US5943571AMethod for manufacturing fine structuresSIEMENS AG·Filed 1997·Granted Aug 24, 1999·25 cites·5 claims
- 3960US6204119B1Manufacturing method for a capacitor in an integrated memory circuitSIEMENS AG·Filed 1999·Granted Mar 20, 2001·19 cites·10 claims
- 4059US6197666B1Method for the fabrication of a doped silicon layerSIEMENS AG·Filed 1999·Granted Mar 6, 2001·21 cites·12 claims
- 4158US6887437B1Reactor configuration and method for producing itINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 3, 2005·3 cites·8 claims
- 4257US5643836AMethod for producing a semiconductor layer structure having a planarized surface and the use thereof in the manufacture of bipolar transistors and DRAMSSIEMENS AG·Filed 1994·Granted Jul 1, 1997·26 cites·10 claims
- 4356US7612430B2Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 3, 2009·7 cites·14 claims
- 4456US6117790AMethod for fabricating a capacitor for a semiconductor memory configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·16 cites·13 claims
- 4556US5663107AGlobal planarization using self aligned polishing or spacer technique and isotropic etch processSIEMENS AG·Filed 1994·Granted Sep 2, 1997·26 cites·18 claims
- 4655US6037209AMethod for producing a DRAM cellular arrangementSIEMENS AG·Filed 1997·Granted Mar 14, 2000·14 cites·7 claims
- 4755US5498567AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1995·Granted Mar 12, 1996·16 cites·7 claims
- 4854US6054345AMethod for forming deep depletion mode dynamic random access memory (DRAM) cellSIEMENS AG·Filed 1997·Granted Apr 25, 2000·12 cites·14 claims
- 4954US6022786AMethod for manufacturing a capacitor for a semiconductor arrangementSIEMENS AG·Filed 1998·Granted Feb 8, 2000·15 cites·13 claims
- 5052US6518613B2Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 11, 2003·4 cites·6 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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