Inventor · disambiguated record
Deborah A. Neumayer
Also filed as: MILLER ROBERT D · NEUMAYER DEBORAH · NEUMAYER DEBORAH A · NEUMAYER DEBORAH ANN
85 granted patents·19 pending applications·4,844 citations·filing 1990–2020
99Inventor score
Top patents by PatentIndex Score
104 records- 0199US7049247B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2004·Granted May 23, 2006·558 cites·28 claims
- 0299US6984591B1Precursor source mixturesIBM·Filed 2000·Granted Jan 10, 2006·843 cites·45 claims
- 0399US6203613B1Atomic layer deposition with nitrate containing precursorsIBM·Filed 1999·Granted Mar 20, 2001·1.6k cites·53 claims
- 0498US6664186B1Method of film deposition, and fabrication of structuresIBM·Filed 2000·Granted Dec 16, 2003·162 cites·10 claims
- 0597US5981970AThin-film field-effect transistor with organic semiconductor requiring low operating voltagesIBM·Filed 1997·Granted Nov 9, 1999·232 cites·20 claims
- 0697US5946551AFabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectricFiled 1997·Granted Aug 31, 1999·275 cites·31 claims
- 0796US10467586B2Blockchain ledgers of material spectral signatures for supply chain integrity managementIBM·Filed 2017·Granted Nov 5, 2019·15 cites·11 claims
- 0896US7479306B2SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the sameIBM·Filed 2005·Granted Jan 20, 2009·26 cites·1 claims
- 0996US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 1095US6888714B2Tuneable ferroelectric decoupling capacitorIBM·Filed 2002·Granted May 3, 2005·106 cites·13 claims
- 1194US9515252B1Low degradation MRAM encapsulation process using silicon-rich silicon nitride filmIBM·Filed 2015·Granted Dec 6, 2016·13 cites·20 claims
- 1294US6511876B2High mobility FETS using A1203 as a gate oxideIBM·Filed 2001·Granted Jan 28, 2003·84 cites·38 claims
- 1394US6172385B1Multilayer ferroelectric capacitor structureIBM·Filed 1998·Granted Jan 9, 2001·155 cites·15 claims
- 1493US9472450B2Graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Oct 18, 2016·13 cites·5 claims
- 1593US8455292B2Deposition of germanium filmASSEFA SOLOMON·Filed 2011·Granted Jun 4, 2013·17 cites·9 claims
- 1693US7491658B2Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionalityIBM·Filed 2004·Granted Feb 17, 2009·63 cites·16 claims
- 1792US8202783B2Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabricationLIN QINGHUANG·Filed 2009·Granted Jun 19, 2012·9 cites·16 claims
- 1892US6344660B1Thin-film field-effect transistor with organic semiconductor requiring low operating voltagesIBM·Filed 1999·Granted Feb 5, 2002·108 cites·23 claims
- 1991US8895433B2Method of forming a graphene cap for copper interconnect structuresSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 25, 2014·9 cites·17 claims
- 2091US8461039B2Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabricationLIN QINGHUANG·Filed 2012·Granted Jun 11, 2013·5 cites·18 claims
- 2190US10685323B2Blockchain ledgers of material spectral signatures for supply chain integrity managementIBM·Filed 2017·Granted Jun 16, 2020·6 cites·9 claims
- 2290US9994741B2Enhanced adhesive materials and processes for 3D applicationsHEDRICK JAMES L·Filed 2015·Granted Jun 12, 2018·7 cites·5 claims
- 2390US9984940B1Selective and conformal passivation layer for 3D high-mobility channel devicesIBM·Filed 2017·Granted May 29, 2018·6 cites·18 claims
- 2490US8623761B2Method of forming a graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Jan 7, 2014·9 cites·10 claims
- 2589US9698043B1Shallow trench isolation for semiconductor devicesIBM·Filed 2016·Granted Jul 4, 2017·5 cites·5 claims
- 2689US8101236B2Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bondingEDELSTEIN DANIEL C·Filed 2009·Granted Jan 24, 2012·8 cites·24 claims
- 2788US7892648B2SiCOH dielectric material with improved toughness and improved Si-C bondingIBM·Filed 2005·Granted Feb 22, 2011·8 cites·13 claims
- 2888US7521377B2SiCOH film preparation using precursors with built-in porogen functionalityIBM·Filed 2006·Granted Apr 21, 2009·11 cites·1 claims
- 2988US7357977B2Ultralow dielectric constant layer with controlled biaxial stressIBM·Filed 2005·Granted Apr 15, 2008·10 cites·7 claims
- 3086US9418846B1Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2015·Granted Aug 16, 2016·4 cites·16 claims
- 3185US7915180B2SiCOH film preparation using precursors with built-in porogen functionalityIBM·Filed 2009·Granted Mar 29, 2011·8 cites·20 claims
- 3285US6255122B1Amorphous dielectric capacitors on siliconIBM·Filed 1999·Granted Jul 3, 2001·45 cites·26 claims
- 3383US7674521B2Materials containing voids with void size controlled on the nanometer scaleIBM·Filed 2005·Granted Mar 9, 2010·9 cites·6 claims
- 3482US8604337B2Method to evaluate effectiveness of substrate cleanness and quantity of pin holes in an antireflective coating of a solar cellCOTTE JOHN M·Filed 2012·Granted Dec 10, 2013·2 cites·5 claims
- 3581US7745863B2Flip FERAM cell and method to form sameIBM·Filed 2008·Granted Jun 29, 2010·5 cites·15 claims
- 3680US10541151B1Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabricationIBM·Filed 2018·Granted Jan 21, 2020·2 cites·16 claims
- 3780US8530886B2Nitride gate dielectric for graphene MOSFETAVOURIS PHAEDON·Filed 2011·Granted Sep 10, 2013·5 cites·26 claims
- 3880US8519260B2Method to evaluate effectiveness of substrate cleanness and quantity of pin holes in an antireflective coating of a solar cellCOTTE JOHN M·Filed 2010·Granted Aug 27, 2013·2 cites·20 claims
- 3980US8268411B2Materials containing voids with void size controlled on the nanometer scaleGATES STEPHEN M·Filed 2009·Granted Sep 18, 2012·7 cites·13 claims
- 4079US8373271B2Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabricationIBM·Filed 2010·Granted Feb 12, 2013·4 cites·28 claims
- 4179US6333202B1Flip FERAM cell and method to form sameIBM·Filed 1999·Granted Dec 25, 2001·27 cites·27 claims
- 4278US9679775B2Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2016·Granted Jun 13, 2017·2 cites·10 claims
- 4378US8101150B2Control of carbon nanotube diameter using CVD or PECVD growthGRILL ALFRED·Filed 2009·Granted Jan 24, 2012·3 cites·19 claims
- 4478US7628974B2Control of carbon nanotube diameter using CVD or PECVD growthIBM·Filed 2003·Granted Dec 8, 2009·14 cites·15 claims
- 4577US7015152B2Method of film deposition, and fabrication of structuresIBM·Filed 2003·Granted Mar 21, 2006·15 cites·26 claims
- 4676US8680511B2Bilayer gate dielectric with low equivalent oxide thickness for graphene devicesDIMITRAKOPOULOS CHRISTOS D·Filed 2012·Granted Mar 25, 2014·3 cites·27 claims
- 4776US8618183B2Materials containing voids with void size controlled on the nanometer scaleGATES STEPHEN M·Filed 2012·Granted Dec 31, 2013·3 cites·16 claims
- 4876US6388285B1Feram cell with internal oxygen source and method of oxygen releaseIBM·Filed 1999·Granted May 14, 2002·30 cites·30 claims
- 4975US9881793B2Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (DSA) patterningIBM·Filed 2015·Granted Jan 30, 2018·2 cites·19 claims
- 5075US6525427B2BEOL decoupling capacitorIBM·Filed 2002·Granted Feb 25, 2003·11 cites·5 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →