Inventor · disambiguated record
Takatomo Sasaki
Also filed as: SASAKI TAKATOMO
53 granted patents·11 pending applications·336 citations·filing 1986–2013
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD8JAPAN SCIENCE & TECH CORP5NGK INSULATORS LTD4UNIV OSAKA4IWAI MAKOTO3
Top patents by PatentIndex Score
64 records- 0194US7381268B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jun 3, 2008·12 cites·38 claims
- 0292US7435295B2Method for producing compound single crystal and production apparatus for use thereinMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·11 cites·32 claims
- 0391US7058103B2Light-emitting apparatus, phosphor, and method of producing itSHARP KK·Filed 2003·Granted Jun 6, 2006·43 cites·20 claims
- 0490US7948673B2Optical wavelength conversion element having a cesium-lithium-borate crystalUNIV OSAKA·Filed 2008·Granted May 24, 2011·14 cites·9 claims
- 0589US7754012B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitridePANASONIC CORP·Filed 2008·Granted Jul 13, 2010·6 cites·27 claims
- 0689US7459023B2Method for producing semiconductor crystalTOYODA GOSEI KK·Filed 2006·Granted Dec 2, 2008·7 cites·20 claims
- 0785US7905958B2Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Mar 15, 2011·10 cites·8 claims
- 0885US7815733B2Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystalNGK INSULATORS LTD·Filed 2007·Granted Oct 19, 2010·5 cites·16 claims
- 0983US7419545B2Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Sep 2, 2008·4 cites·18 claims
- 1080US7288152B2Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the sameYUSUKE MORI·Filed 2004·Granted Oct 30, 2007·31 cites·28 claims
- 1179US8287760B2Light-emitting apparatus, phosphorescent portion, and method of producing the sameISHIDA MASAYA·Filed 2010·Granted Oct 16, 2012·3 cites·4 claims
- 1279US8084281B2Semiconductor substrate, electronic device, optical device, and production methods thereforSHIBATA NAOKI·Filed 2007·Granted Dec 27, 2011·6 cites·20 claims
- 1377US7176115B2Method of manufacturing Group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 13, 2007·19 cites·58 claims
- 1476US8025728B2Method for manufacturing single crystal of nitrideNGK INSULATORS LTD·Filed 2008·Granted Sep 27, 2011·2 cites·7 claims
- 1576US7842133B2Single crystal growing methodNGK INSULATORS LTD·Filed 2008·Granted Nov 30, 2010·2 cites·11 claims
- 1676US6843849B1Method and apparatus for growing high quality single crystalJAPAN SCIENCE & TECH CORP·Filed 2000·Granted Jan 18, 2005·12 cites·15 claims
- 1775US7833347B2Process and apparatus for producing nitride single crystalNGK INSULATORS LTD·Filed 2008·Granted Nov 16, 2010·7 cites·2 claims
- 1875US5998313ACesium-lithium borate crystalJAPAN SCIENCE & TECH CORP·Filed 1997·Granted Dec 7, 1999·28 cites·9 claims
- 1971US8037739B2Method for analyzing sample in liquidSHIMADZU CORP·Filed 2008·Granted Oct 18, 2011·5 cites·17 claims
- 2071US7700001B2Light-emitting apparatus, phosphor and method of producing itSHARP KK·Filed 2008·Granted Apr 20, 2010·2 cites·1 claims
- 2170US8574361B2Group-III element nitride crystal producing method and group-III element nitride crystalYAMADA OSAMU·Filed 2008·Granted Nov 5, 2013·2 cites·12 claims
- 2268US8187507B2GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatusMORI YUSUKE·Filed 2007·Granted May 29, 2012·3 cites·12 claims
- 2367US7309534B2Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 18, 2007·10 cites·55 claims
- 2464US8227324B2Method for producing group III nitride-based compound semiconductor crystalYAMAZAKI SHIRO·Filed 2007·Granted Jul 24, 2012·2 cites·20 claims
- 2564US7125801B2Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·8 cites·29 claims
- 2664US6296784B1Cesium-lithium-borate crystal and its application to frequency conversion of laser lightJAPAN RES DEV CORP·Filed 1995·Granted Oct 2, 2001·12 cites·20 claims
- 2763US9017479B2Nitride single crystal manufacturing apparatusIWAI MAKOTO·Filed 2008·Granted Apr 28, 2015·3 cites·5 claims
- 2863US7507292B2Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared therebyOSAKA IND PROMOTION ORG·Filed 2003·Granted Mar 24, 2009·5 cites·24 claims
- 2962US8657955B2Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystalIWAI MAKOTO·Filed 2009·Granted Feb 25, 2014·0 cites·2 claims
- 3062US7255742B2Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 14, 2007·4 cites·26 claims
- 3159US7198738B2Cesium-lithium-borate crystal and its application to frequency conversion of laser lightJAPAN RES DEV CORP·Filed 2005·Granted Apr 3, 2007·0 cites·9 claims
- 3259US7142354B2Wavelength conversion method, wavelength conversion device, and laser beam machineMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 28, 2006·6 cites·20 claims
- 3359US7029528B2Method for flattening surface of oxide crystal to ultra high degreeJAPAN SCIENCE & TECH CORP·Filed 2002·Granted Apr 18, 2006·3 cites·6 claims
- 3456US7794539B2Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced therebyPANASONIC CORP·Filed 2005·Granted Sep 14, 2010·1 cites·16 claims
- 3556US7288151B2Method of manufacturing group-III nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Oct 30, 2007·2 cites·9 claims
- 3655US8231729B2Apparatus for producing nitride single crystalIWAI MAKOTO·Filed 2008·Granted Jul 31, 2012·0 cites·4 claims
- 3755US7247203B2Process for producing crystalline nucleus and method of screening crystallization conditionsOSAKA IND PROMOTION ORG·Filed 2003·Granted Jul 24, 2007·3 cites·17 claims
- 3853US2006187994A1Light-emitting apparatus, phosphor, and method of producing itSHARP KK·Filed 2006·Application pending·0 cites
- 3952US8486190B2Process for producing single crystalIMAI KATSUHIRO·Filed 2008·Granted Jul 16, 2013·0 cites·6 claims
- 4052US7744696B2Method for preparing borate-based crystal and laser oscillation apparatusJAPAN SCIENCE & TECH AGENCY·Filed 2004·Granted Jun 29, 2010·2 cites·8 claims
- 4152US7708833B2Crystal growing apparatusTOYODA GOSEI KK·Filed 2008·Granted May 4, 2010·0 cites·20 claims
- 4251US8361222B2Method for producing group III nitride-based compound semiconductorTOYODA GOSEI KK·Filed 2008·Granted Jan 29, 2013·0 cites·11 claims
- 4350US8216365B2Method for producing a semiconductor crystalNAGAI SEIJI·Filed 2008·Granted Jul 10, 2012·0 cites·18 claims
- 4449US8999059B2Process for producing a nitride single crystal and apparatus thereforIMAI KATSUHIRO·Filed 2008·Granted Apr 7, 2015·0 cites·25 claims
- 4549US2014063688A1Capacitor moduleSASAKI TAKATOMO·Filed 2013·Application pending·0 cites
- 4648US8506705B2Method for manufacturing nitride single crystalICHIMURA MIKIYA·Filed 2009·Granted Aug 13, 2013·0 cites·7 claims
- 4748US4670117AElectrodialytic method of growing water-soluble ionic crystalUNIV OSAKA·Filed 1986·Granted Jun 2, 1987·13 cites·3 claims
- 4848US2009205561A1METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAMEUNIV OSAKA·Filed 2007·Application pending·0 cites
- 4948US2005254118A1Nonlinear optical crystalSASAKI TAKATOMO·Filed 2005·Application pending·0 cites
- 5047US7959729B2Method for producing group-III-element nitride single crystals and apparatus used thereinUNIV OSAKA·Filed 2004·Granted Jun 14, 2011·2 cites·12 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →