Inventor · disambiguated record
Jae Chul Om
Also filed as: OM JAE C · OM JAE CHUL
15 granted patents·1 pending application·89 citations·filing 1990–2011
91Inventor score
Top patents by PatentIndex Score
16 records- 0187US7456466B2NAND flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Nov 25, 2008·11 cites·10 claims
- 0278US7573089B2Non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 11, 2009·7 cites·15 claims
- 0369US7910430B2NAND flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·3 cites·10 claims
- 0463US7566618B2Non-volatile memory device having SONOS structure and manufacturing method thereofHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 28, 2009·2 cites·14 claims
- 0563US5075248AMethod of making DRAM having a side wall doped trench and stacked capacitor structureHYUNDAI ELECTRONICS IND·Filed 1991·Granted Dec 24, 1991·26 cites·6 claims
- 0658US8044454B2Non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Oct 25, 2011·1 cites·9 claims
- 0758US7727839B2Method of manufacturing NAND flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jun 1, 2010·1 cites·17 claims
- 0857US5200354AMethod for manufacturing dynamic random access memory cellHYUNDAI ELECTRONICS IND·Filed 1990·Granted Apr 6, 1993·20 cites·3 claims
- 0956US7595239B2Method of fabricating flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Sep 29, 2009·1 cites·4 claims
- 1053US7851311B2Method of manufacturing non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Dec 14, 2010·0 cites·11 claims
- 1146US5523250AMethod of manufacturing a MOSFET with LDD regionsHYUNDAI ELECTRONICS IND·Filed 1993·Granted Jun 4, 1996·11 cites·11 claims
- 1245US8268685B2NAND flash memory device and method of manufacturing the sameOM JAE CHUL·Filed 2011·Granted Sep 18, 2012·0 cites·6 claims
- 1341US8106448B2NAND flash memory deviceOM JAE CHUL·Filed 2010·Granted Jan 31, 2012·0 cites·5 claims
- 1440US2008093661A1Non-volatile memory device having a charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1539US6943125B2Method for manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 13, 2005·0 cites·9 claims
- 1628US5770505AMethod for the fabrication of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jun 23, 1998·6 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →