Inventor · disambiguated record
Jay C. Nelson
Also filed as: NELSON JAY C · NELSON JAY CURTIS
11 granted patents·1 pending application·398 citations·filing 1996–2007
93Inventor score
Top patents by PatentIndex Score
12 records- 0195US7319336B2Charged particle beam device probe operationZYVEX INSTR LLC·Filed 2005·Granted Jan 15, 2008·63 cites·19 claims
- 0295US5894218AMethod and apparatus for automatically positioning electronic dice within component packagesMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 13, 1999·137 cites·42 claims
- 0389US6900459B2Apparatus for automatically positioning electronic dice within component packagesMICRON TECHNOLOGY INC·Filed 2002·Granted May 31, 2005·28 cites·42 claims
- 0487US7675300B2Charged particle beam device probe operationZYVEX INSTR LLC·Filed 2007·Granted Mar 9, 2010·12 cites·27 claims
- 0586US6064194AMethod and apparatus for automatically positioning electronic dice within component packagesMICRON TECHNOLOGY INC·Filed 1996·Granted May 16, 2000·51 cites·14 claims
- 0685US6492187B1Method for automatically positioning electronic die within component packagesMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 10, 2002·21 cites·6 claims
- 0782US5955877AMethod and apparatus for automatically positioning electronic dice within component packagesMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 21, 1999·40 cites·7 claims
- 0865US6210984B1Method and apparatus for automatically positioning electronic dice within component packagesMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 3, 2001·17 cites·11 claims
- 0964US6150828AMethod and apparatus for automatically positioning electronic dice with component packagesMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 21, 2000·16 cites·22 claims
- 1052US6353312B1Method for positioning a semiconductor die within a temporary packageMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 5, 2002·9 cites·9 claims
- 1146US6835247B2Rod replenishment system for use in single crystal silicon productionADVANCED SILICON MATERIALS LLC·Filed 2001·Granted Dec 28, 2004·4 cites·24 claims
- 1227US2002108558A1Method for increasing charge size for single crystal silicon productionFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →