Inventor · disambiguated record
Hugo Burke
Also filed as: BURKE HUGO · BURKE HUGO R · BURKE HUGO R G
23 granted patents·2 pending applications·52 citations·filing 2004–2020
93Inventor score
Files withINFINEON TECHNOLOGIES AMERICAS CORP12INT RECTIFIER CORP9HENSON TIMOTHY D2BURKE HUGO R G1MONTGOMERY ROBERT1
Top patents by PatentIndex Score
25 records- 0192US9620583B2Power semiconductor device with source trench and termination trench implantsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 11, 2017·13 cites·20 claims
- 0280US7682935B2Process of manufacture of ultra thin semiconductor wafers with bonded conductive hard carrierINT RECTIFIER CORP·Filed 2006·Granted Mar 23, 2010·9 cites·21 claims
- 0377US8791525B2Power semiconductor device including a double metal contactMONTGOMERY ROBERT·Filed 2008·Granted Jul 29, 2014·7 cites·12 claims
- 0474US9627328B2Semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 0570US7851361B2Laser ablation to selectively thin wafers/die to lower device RDSONINT RECTIFIER CORP·Filed 2006·Granted Dec 14, 2010·3 cites·20 claims
- 0668US10593664B2Controlled resistance integrated snubber for power switching deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Mar 17, 2020·1 cites·7 claims
- 0767US8294208B2Semiconductor device having a gate contact on one surface electrically connected to a gate bus on an opposing surfaceBURKE HUGO R G·Filed 2009·Granted Oct 23, 2012·5 cites·17 claims
- 0863US9761550B2Power semiconductor device with a double metal contact and related methodINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Sep 12, 2017·1 cites·18 claims
- 0963US7517810B2Reduced metal design rules for power devicesINT RECTIFIER CORP·Filed 2006·Granted Apr 14, 2009·1 cites·11 claims
- 1062US7508052B2Crack protection for silicon dieINT RECTIFIER CORP·Filed 2005·Granted Mar 24, 2009·2 cites·9 claims
- 1159US11217577B2Controlled resistance integrated snubber for power switching deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2020·Granted Jan 4, 2022·0 cites·13 claims
- 1255US9318355B2Power semiconductor device with a double metal contactINT RECTIFIER CORP·Filed 2014·Granted Apr 19, 2016·0 cites·9 claims
- 1355US8536645B2Trench MOSFET and method for fabricating sameHENSON TIMOTHY D·Filed 2011·Granted Sep 17, 2013·1 cites·20 claims
- 1454US7368353B2Trench power MOSFET with reduced gate resistanceINT RECTIFIER CORP·Filed 2004·Granted May 6, 2008·7 cites·7 claims
- 1550US10388591B2Method of forming a reliable and robust electrical contactINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Aug 20, 2019·0 cites·19 claims
- 1650US9966464B2Method of forming a semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted May 8, 2018·0 cites·19 claims
- 1750US9673287B2Reliable and robust electrical contactINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Jun 6, 2017·0 cites·20 claims
- 1849US2017213909A1Method for Fabricating a Shallow and Narrow Trench FETINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Application pending·0 cites
- 1944US9812538B2Buried bus and related methodINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Nov 7, 2017·0 cites·18 claims
- 2043US7423317B2Split electrode gate trench power deviceINT RECTIFIER CORP·Filed 2006·Granted Sep 9, 2008·0 cites·12 claims
- 2142US10236246B2Semiconductor devices and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Mar 19, 2019·0 cites·18 claims
- 2241US9818743B2Power semiconductor device with contiguous gate trenches and offset source trenchesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Nov 14, 2017·0 cites·16 claims
- 2341US9653597B2Method for fabricating a shallow and narrow trench FET and related structuresHENSON TIMOTHY D·Filed 2010·Granted May 16, 2017·0 cites·5 claims
- 2440US7385273B2Power semiconductor deviceINT RECTIFIER CORP·Filed 2006·Granted Jun 10, 2008·0 cites·9 claims
- 2533US2015325685A1Power Semiconductor Device with Low RDSON and High Breakdown VoltageINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →