Inventor · disambiguated record
Jyh-Haur Wang
Also filed as: WANG JYH-HAUR
10 granted patents·212 citations·filing 1996–2000
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG10
Top patents by PatentIndex Score
10 records- 0188US6380021B1Ultra-shallow junction formation by novel process sequence for PMOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·49 cites·19 claims
- 0279US6191052B1Method for fabricating an ultra-shallow junction with low resistance using a screen oxide formed by poly re-oxidation in a nitrogen containing atmosphereTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 20, 2001·60 cites·14 claims
- 0358US6407433B1Preventing gate oxide damage by post poly definition implantation while gate mask is onTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·5 cites·13 claims
- 0457US5866947APost tungsten etch bank anneal, to improve aluminum step coverageTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 2, 1999·20 cites·3 claims
- 0556US6117737AReduction of a hot carrier effect by an additional furnace anneal increasing transient enhanced diffusion for devices comprised with low temperature spacersTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 12, 2000·18 cites·25 claims
- 0655US6214682B1Method for fabricating an ultra-shallow junction with low resistance using a rapid thermal anneal in ammonia to increase activation ratio and reduce diffusion of lightly doped source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·20 cites·12 claims
- 0751US6121091AReduction of a hot carrier effect phenomena via use of transient enhanced diffusion processesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 19, 2000·14 cites·21 claims
- 0848US6284579B1Drain leakage reduction by indium transient enchanced diffusion (TED) for low power applicationsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 4, 2001·13 cites·4 claims
- 0943US5641710APost tungsten etch back anneal, to improve aluminum step coverageTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jun 24, 1997·10 cites·22 claims
- 1033US6187639B1Method to prevent gate oxide damage by post poly definition implantationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 13, 2001·3 cites·12 claims
Join the waitlist — get patent alerts
Get an alert when Jyh-Haur Wang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →