Inventor · disambiguated record
Ta-Hsiang Kung
Also filed as: KUNG TA-HSIANG
7 granted patents·3 pending applications·5 citations·filing 2013–2025
76Inventor score
Top patents by PatentIndex Score
10 records- 0188US2025343045A1Replacement Gate Methods That Include Treating Spacers to Widen GateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0285US12456623B2Replacement gate methods that include treating spacers to widen gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 0380US12243934B2Channel structures including doped 2D materials for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 0477US11069531B2Replacement gate methods that include treating spacers to widen gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·1 cites·20 claims
- 0577US9209243B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 8, 2015·3 cites·21 claims
- 0677US2024395918A1Method for fabricating channel structures including doped 2d materials for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0774US11908695B2Replacement gate methods that include treating spacers to widen gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 0871US12100755B2Channel structures including doped 2D materials for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 24, 2024·0 cites·20 claims
- 0960US8975155B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·1 cites·20 claims
- 1052US2024162079A1Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →