Inventor · disambiguated record
Ganesh Samudra
Also filed as: SAMUDRA GANESH · SAMUDRA GANESH S · SAMUDRA GANESH SHANKAR
7 granted patents·156 citations·filing 2000–2005
86Inventor score
Top patents by PatentIndex Score
7 records- 0186US6853033B2Power MOSFET having enhanced breakdown voltageUNIV SINGAPORE·Filed 2002·Granted Feb 8, 2005·61 cites·18 claims
- 0282US6391720B1Process flow for a performance enhanced MOSFET with self-aligned, recessed channelCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·38 cites·50 claims
- 0377US7091092B2Process flow for a performance enhanced MOSFET with self-aligned, recessed channelUNIV SINGAPORE·Filed 2002·Granted Aug 15, 2006·25 cites·28 claims
- 0474US7313780B2System and method for designing semiconductor photomasksCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Dec 25, 2007·5 cites·20 claims
- 0573US6284606B1Process to achieve uniform groove depth in a silicon substrateCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Sep 4, 2001·20 cites·13 claims
- 0659US7892905B2Formation of strained Si channel and Si1-xGex source/drain structures using laser annealingGLOBALFOUNDRIES SG PTE LTD·Filed 2005·Granted Feb 22, 2011·2 cites·40 claims
- 0749US7238581B2Method of manufacturing a semiconductor device with a strained channelCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Jul 3, 2007·5 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →