Inventor · disambiguated record
Shu-Ya Chuang
Also filed as: CHUANG SHU-YA
18 granted patents·2 pending applications·235 citations·filing 1998–2004
94Inventor score
Top patents by PatentIndex Score
20 records- 0178US6159808AMethod of forming self-aligned DRAM cellUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 12, 2000·40 cites·12 claims
- 0276US5998259AMethod of fabricating dual cylindrical capacitorUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Dec 7, 1999·34 cites·15 claims
- 0370US6218241B1Fabrication method for a compact DRAM cellUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 17, 2001·13 cites·19 claims
- 0464US6107159AMethod for fabricating a shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Aug 22, 2000·31 cites·22 claims
- 0560US5937309AMethod for fabricating shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Aug 10, 1999·25 cites·13 claims
- 0659US6159789AMethod for fabricating capacitorUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 12, 2000·16 cites·19 claims
- 0759US5960282AMethod for fabricating a dynamic random access memory with a vertical pass transistorUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Sep 28, 1999·17 cites·20 claims
- 0854US6884689B2Fabrication of self-aligned bipolar transistorUNITED MICROELECTRONICS CORP·Filed 2002·Granted Apr 26, 2005·5 cites·30 claims
- 0953US6774002B2Structure and method for forming self-aligned bipolar junction transistor with expitaxy baseUNITED MICROELECTRONICS CORP·Filed 2002·Granted Aug 10, 2004·6 cites·36 claims
- 1051US6548373B2Method for forming shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 15, 2003·5 cites·21 claims
- 1148US5981337AMethod of fabricating stack capacitorUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Nov 9, 1999·11 cites·26 claims
- 1245US6200854B1Method of manufacturing dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 13, 2001·8 cites·36 claims
- 1342US6172388B1Method of fabricating dynamic random access memoriesUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Jan 9, 2001·6 cites·6 claims
- 1441US6344415B1Method for forming a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 5, 2002·10 cites·18 claims
- 1539US2005040470A1Fabrication of self-aligned bipolar transistorUNITED MICROELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 1636US6417036B1Method of fabricating dynamic random access memoriesUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 9, 2002·1 cites·13 claims
- 1735US6083804AMethod for fabricating a capacitor in a dynamic random access memoryUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Jul 4, 2000·5 cites·8 claims
- 1834US2002132191A1Method for forming a contact padFiled 2001·Application pending·0 cites
- 1932US6190958B1Fully self-aligned method for fabricating transistor and memoryUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Feb 20, 2001·2 cites·19 claims
- 2029US6479307B2Method of monitoring loss of silicon nitrideUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 12, 2002·0 cites·10 claims
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