Inventor · disambiguated record
Manfred Horstmann
Also filed as: HORSTMANN MANFRED
84 granted patents·16 pending applications·1,513 citations·filing 1999–2024
99Inventor score
Files withADVANCED MICRO DEVICES INC74GLOBALFOUNDRIES INC7WEI ANDY3HORSTMANN MANFRED2WIRBELEIT FRANK2
Top patents by PatentIndex Score
100 records- 0198US7297994B2Semiconductor device having a retrograde dopant profile in a channel regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 20, 2007·117 cites·11 claims
- 0297US6274894B1Low-bandgap source and drain formation for short-channel MOS transistorsADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·205 cites·18 claims
- 0396US6881641B2Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 19, 2005·132 cites·49 claims
- 0495US7442971B2Self-biasing transistor structure and an SRAM cell having less than six transistorsADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 28, 2008·133 cites·25 claims
- 0595US7399663B2Embedded strain layer in thin SOI transistors and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 15, 2008·31 cites·18 claims
- 0694US7741167B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 22, 2010·26 cites·10 claims
- 0794US7060549B1SRAM devices utilizing tensile-stressed strain films and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 13, 2006·36 cites·15 claims
- 0893US7579262B2Different embedded strain layers in PMOS and NMOS transistors and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 25, 2009·25 cites·23 claims
- 0993US7208397B2Transistor having an asymmetric source/drain and halo implantation region and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 24, 2007·23 cites·19 claims
- 1092US7329571B2Technique for providing multiple stress sources in NMOS and PMOS transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 12, 2008·24 cites·29 claims
- 1191US7659213B2Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the sameGLOBALFOUNDRIES INC·Filed 2006·Granted Feb 9, 2010·20 cites·21 claims
- 1291US6838363B2Circuit element having a metal silicide region thermally stabilized by a barrier diffusion materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 4, 2005·54 cites·24 claims
- 1390US6255703B1Device with lower LDD resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·69 cites·20 claims
- 1489US7238578B2Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regionsADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 3, 2007·15 cites·18 claims
- 1589US6352885B1Transistor having a peripherally increased gate insulation thickness and a method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 5, 2002·46 cites·22 claims
- 1688US7906383B2Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2008·Granted Mar 15, 2011·16 cites·28 claims
- 1786US7829421B2SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 9, 2010·11 cites·8 claims
- 1885US7696052B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 13, 2010·10 cites·13 claims
- 1984US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 2082US7863171B2SOI transistor having a reduced body potential and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 4, 2011·11 cites·7 claims
- 2182US7402497B2Transistor device having an increased threshold stability without drive current degradationADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 22, 2008·7 cites·19 claims
- 2281US12316251B2Variable-speed drive for single-phase asynchronous motorsHORSTMANN SYSTEMS CORP·Filed 2024·Granted May 27, 2025·0 cites·5 claims
- 2381US7719060B2Tensile strain source using silicon/germanium in globally strained siliconADVANCED MICRO DEVICES INC·Filed 2008·Granted May 18, 2010·6 cites·28 claims
- 2481US6566718B2Field effect transistor with an improved gate contact and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·33 cites·32 claims
- 2581US6242776B1Device improvement by lowering LDD resistance with new silicide processADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 5, 2001·41 cites·14 claims
- 2679US7893503B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2010·Granted Feb 22, 2011·4 cites·9 claims
- 2776US8039335B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2011·Granted Oct 18, 2011·3 cites·3 claims
- 2876US7955937B2Method for manufacturing semiconductor device comprising SOI transistors and bulk transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 7, 2011·7 cites·7 claims
- 2976US7381624B2Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrateADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 3, 2008·5 cites·13 claims
- 3076US6344397B1Semiconductor device having a gate electrode with enhanced electrical characteristicsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 5, 2002·24 cites·31 claims
- 3175US7556996B2Field effect transistor comprising a stressed channel region and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 7, 2009·7 cites·6 claims
- 3274US6541863B1Semiconductor device having a reduced signal processing time and a method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 1, 2003·20 cites·17 claims
- 3373US6821887B2Method of forming a metal silicide gate in a standard MOS process sequenceADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·18 cites·45 claims
- 3473US6593175B2Method of controlling a shape of an oxide layer formed on a substrateADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·16 cites·26 claims
- 3571US7999326B2Tensile strain source using silicon/germanium in globally strained siliconADVANCED MICRO DEVICES INC·Filed 2010·Granted Aug 16, 2011·2 cites·26 claims
- 3671US7510926B2Technique for providing stress sources in MOS transistors in close proximity to a channel regionADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 31, 2009·4 cites·9 claims
- 3771US6846708B2Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 25, 2005·13 cites·28 claims
- 3871US6593197B2Sidewall spacer based fet alignment technologyADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·16 cites·29 claims
- 3971US6133124ADevice improvement by source to drain resistance lowering through undersilicidationADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 17, 2000·38 cites·36 claims
- 4070US7419867B2CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Sep 2, 2008·4 cites·24 claims
- 4168US7659170B2Method of increasing transistor drive current by recessing an isolation trenchGLOBALFOUNDRIES INC·Filed 2007·Granted Feb 9, 2010·5 cites·13 claims
- 4268US6812074B2SOI field effect transistor element having a recombination region and method of forming sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·11 cites·8 claims
- 4367US7217657B2Semiconductor device having different metal silicide portions and method for fabricating the semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted May 15, 2007·13 cites·23 claims
- 4467US6849516B2Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·11 cites·28 claims
- 4566US6555892B2Semiconductor device with reduced line-to-line capacitance and cross talk noiseADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·12 cites·9 claims
- 4665US6798028B2Field effect transistor with reduced gate delay and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 28, 2004·12 cites·23 claims
- 4764US7727827B2Method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2007·Granted Jun 1, 2010·2 cites·15 claims
- 4864US6754553B2Implant monitoring using multiple implanting and annealing stepsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 22, 2004·9 cites·9 claims
- 4963US7064074B2Technique for forming contacts for buried doped regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 20, 2006·11 cites·22 claims
- 5062US6673665B2Semiconductor device having increased metal silicide portions and method of forming the semiconductorADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 6, 2004·10 cites·24 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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