Inventor · disambiguated record
James Kai
Also filed as: KAI JAMES · KAI JAMES K
153 granted patents·8 pending applications·3,931 citations·filing 1996–2024
99Inventor score
Files withSANDISK TECHNOLOGIES LLC70SANDISK TECHNOLOGIES INC31SANDISK CORP20ADVANCED MICRO DEVICES INC11PURAYATH VINOD ROBERT7
Top patents by PatentIndex Score
161 records- 0199US11195857B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 7, 2021·7 cites·20 claims
- 0299US10629616B1Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·143 cites·20 claims
- 0399US10355009B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·62 cites·10 claims
- 0499US10290643B1Three-dimensional memory device containing floating gate select transistorSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·44 cites·11 claims
- 0599US9953992B1Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 24, 2018·64 cites·13 claims
- 0699US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 0799US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 0899US8187936B2Ultrahigh density vertical NAND memory device and method of making thereofALSMEIER JOHANN·Filed 2010·Granted May 29, 2012·304 cites·18 claims
- 0998US11355486B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 7, 2022·10 cites·20 claims
- 1098US11201107B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·34 cites·20 claims
- 1198US11195781B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 7, 2021·22 cites·20 claims
- 1298US10388666B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 20, 2019·19 cites·5 claims
- 1398US10050054B2Three-dimensional memory device having drain select level isolation structure and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·26 cites·9 claims
- 1498US10038006B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 31, 2018·63 cites·28 claims
- 1598US10020363B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·51 cites·17 claims
- 1698US10008570B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·62 cites·16 claims
- 1798US9985098B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 29, 2018·85 cites·11 claims
- 1898US9972640B1Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 15, 2018·65 cites·3 claims
- 1998US9922987B1Three-dimensional memory device containing separately formed drain select transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 20, 2018·99 cites·24 claims
- 2098US9917100B2Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 13, 2018·52 cites·22 claims
- 2198US9831266B2Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·58 cites·24 claims
- 2298US9818759B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·52 cites·13 claims
- 2398US9818693B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·57 cites·20 claims
- 2498US9805805B1Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·61 cites·19 claims
- 2598US9502471B1Multi tier three-dimensional memory devices including vertically shared bit linesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 22, 2016·116 cites·26 claims
- 2698US9252151B2Three dimensional NAND device with birds beak containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 2, 2016·60 cites·33 claims
- 2798US8928061B2Three dimensional NAND device with silicide containing floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 6, 2015·72 cites·11 claims
- 2898US8461641B2Ultrahigh density vertical NAND memory device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·42 cites·15 claims
- 2998US8330208B2Ultrahigh density monolithic three dimensional vertical NAND string memory device and method of making thereofALSMEIER JOHANN·Filed 2012·Granted Dec 11, 2012·46 cites·14 claims
- 3097US11587920B2Bonded semiconductor die assembly containing through-stack via structures and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 21, 2023·4 cites·20 claims
- 3197US11398496B2Three-dimensional memory device employing thinned insulating layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 26, 2022·5 cites·10 claims
- 3297US10685978B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·18 cites·20 claims
- 3397US10559588B2Three-dimensional flat inverse NAND memory device and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 11, 2020·19 cites·20 claims
- 3497US10490569B2Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openingsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 26, 2019·18 cites·17 claims
- 3597US10381443B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·28 cites·10 claims
- 3697US10224407B2High voltage field effect transistor with laterally extended gate dielectric and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 5, 2019·22 cites·16 claims
- 3797US9959932B1Grouping memory cells into sub-blocks for program speed uniformitySANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·24 cites·16 claims
- 3897US9935123B2Within array replacement openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 3, 2018·18 cites·13 claims
- 3997US9728546B23D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 8, 2017·45 cites·12 claims
- 4097US9620514B23D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 11, 2017·34 cites·29 claims
- 4197US9576975B2Monolithic three-dimensional NAND strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 21, 2017·81 cites·10 claims
- 4297US9165940B2Three dimensional NAND device with silicide containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 20, 2015·36 cites·20 claims
- 4397US8383479B2Integrated nanostructure-based non-volatile memory fabricationSANDISK TECHNOLOGIES INC·Filed 2010·Granted Feb 26, 2013·33 cites·47 claims
- 4497US6513564B2Nozzle for cleaving substratesSILICON GENESIS CORP·Filed 2001·Granted Feb 4, 2003·116 cites·5 claims
- 4596US10840260B2Through-array conductive via structures for a three-dimensional memory device and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 17, 2020·16 cites·18 claims
- 4696US10727216B1Method for removing a bulk substrate from a bonded assembly of wafersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 28, 2020·13 cites·20 claims
- 4796US10685979B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·13 cites·22 claims
- 4896US10622369B2Three-dimensional memory device including contact via structures that extend through word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 14, 2020·18 cites·10 claims
- 4996US10297610B2Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 21, 2019·26 cites·6 claims
- 5096US9099496B2Method of forming an active area with floating gate negative offset profile in FG NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 4, 2015·31 cites·34 claims
Showing the top 50 of 161 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →