Inventor · disambiguated record
King-Yuen Wong
Also filed as: WONG KING · WONG KING Y · WONG KING YUEN
129 granted patents·23 pending applications·406 citations·filing 1993–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD44INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD31INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD25TAIWAN SEMICONDUCTOR MFG13SIEMENS MEDICAL SOLUTIONS USA INC9
Top patents by PatentIndex Score
152 records- 0197US10833159B1Semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Granted Nov 10, 2020·33 cites·20 claims
- 0296US8803158B1High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·24 cites·20 claims
- 0395US10050621B2Low static current semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·12 cites·20 claims
- 0495US9793389B1Apparatus and method of fabrication for GaN/Si transistors isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·16 cites·19 claims
- 0594US10411681B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·11 cites·20 claims
- 0693US10284195B2Low static current semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·8 cites·20 claims
- 0793US9882553B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·11 cites·20 claims
- 0893US9111905B2High electron mobility transistor and method of forming the sameYao fu-wei·Filed 2012·Granted Aug 18, 2015·12 cites·20 claims
- 0993US8624296B1High electron mobility transistor including an embedded flourine regionWONG KING-YUEN·Filed 2012·Granted Jan 7, 2014·18 cites·18 claims
- 1093US5514799A1,1-vinyl substituted nonlinear optical materialsENICHEM SPA·Filed 1993·Granted May 7, 1996·53 cites·35 claims
- 1191US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 1290US12125847B2Nitride-based semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·19 claims
- 1390US11502170B2Semiconductor device and manufacturing method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Nov 15, 2022·2 cites·19 claims
- 1490US10790375B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·3 cites·20 claims
- 1589US10002955B2High-electron-mobility transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 19, 2018·4 cites·20 claims
- 1689US8680535B2High electron mobility transistor structure with improved breakdown voltage performanceYao fu-wei·Filed 2012·Granted Mar 25, 2014·7 cites·20 claims
- 1788US10056478B2High-electron-mobility transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 21, 2018·4 cites·20 claims
- 1888US9601608B2Structure for a gallium nitride (GaN) high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·10 cites·20 claims
- 1988US9165839B2Plasma protection diode for a HEMT deviceWONG KING-YUEN·Filed 2012·Granted Oct 20, 2015·6 cites·20 claims
- 2087US11302778B2Semiconductor device and manufacturing method thereforINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Apr 12, 2022·2 cites·7 claims
- 2187US9508807B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·3 cites·20 claims
- 2287US8357579B2Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 22, 2013·8 cites·20 claims
- 2386US11942525B2Semiconductor device with multichannel heterostructure and manufacturing method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Mar 26, 2024·2 cites·12 claims
- 2486US9147743B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·4 cites·20 claims
- 2584US12154864B2III-nitride-based semiconductor devices on patterned substrates and method of making the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Nov 26, 2024·1 cites·17 claims
- 2684US9978844B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 22, 2018·3 cites·20 claims
- 2783US10991803B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
- 2882US8963162B2High electron mobility transistorHSU CHUN-WEI·Filed 2011·Granted Feb 24, 2015·5 cites·20 claims
- 2981US10804895B2Low static current semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 3080US12166102B2Semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Granted Dec 10, 2024·1 cites·17 claims
- 3179US9412870B2Device with engineered epitaxial region and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·2 cites·20 claims
- 3279US8841703B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2011·Granted Sep 23, 2014·4 cites·20 claims
- 3378US12484279B2Semiconductor deviceINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·5 claims
- 3478US12289915B2Semiconductor structureINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·5 claims
- 3577US9379208B2Integrated circuits and methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 28, 2016·2 cites·20 claims
- 3677US9117843B2Device with engineered epitaxial region and methods of making sameWONG KING-YUEN·Filed 2011·Granted Aug 25, 2015·3 cites·20 claims
- 3776US9420997B2Motion artifact suppression in ultrasound diagnostic imagingWONG KING YUEN·Filed 2012·Granted Aug 23, 2016·8 cites·20 claims
- 3875US11569359B2Semiconductor device and fabrication method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 3974US11569358B2Semiconductor device and fabrication method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·17 claims
- 4074US10083856B2Isolation regions for semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 25, 2018·2 cites·20 claims
- 4174US8884341B2Integrated circuitsTSAI CHUN HSIUNG·Filed 2011·Granted Nov 11, 2014·2 cites·20 claims
- 4273US12317569B2Semiconductor device with multichannel heterostructure and manufacturing method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2024·Granted May 27, 2025·0 cites·18 claims
- 4373US11757005B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 4473US9419093B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·2 cites·20 claims
- 4573US9214539B2Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·3 cites·20 claims
- 4673US9184259B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 4773US2024371969A1Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2024·Application pending·0 cites
- 4872US12074199B2Semiconductor device with a field plate extending from drainINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 4972US11837633B2Semiconductor device and manufacturing method thereforINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·15 claims
- 5071US12205945B2Semiconductor device and manufacturing method thereofINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·14 claims
Showing the top 50 of 152 patent records by PatentIndex Score.
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