Inventor · disambiguated record
An Zhang
Also filed as: ZHANG AN · ZHANG AN-YI
20 granted patents·7 pending applications·58 citations·filing 2005–2025
92Inventor score
Top patents by PatentIndex Score
27 records- 0195US10991438B1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 27, 2021·7 cites·20 claims
- 0294US11222674B2Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 11, 2022·5 cites·9 claims
- 0385US10957408B1Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·16 claims
- 0483US2025372184A1Method of reducing program disturbance in memory device and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0577US2025308598A1Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY ECHNOLOGIES CO LTD·Filed 2025·Application pending·0 cites
- 0677US2024363169A1Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0776US12100456B2Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 0874US11848058B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 19, 2023·0 cites·20 claims
- 0974USD517994SElectrical connectorHON HAI PREC IND CO LTD·Filed 2005·Granted Mar 28, 2006·24 cites·1 claims
- 1074US2024062837A1Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1173US11121152B2Three-dimensional memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 14, 2021·1 cites·18 claims
- 1272US10943665B1Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 9, 2021·2 cites·15 claims
- 1370US11676665B2Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·18 claims
- 1468US12412609B2Method of reducing program disturbance in memory device and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 1567US11665905B2Three-dimensional memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1667US11626170B2Method and memory used for reducing program disturbance by adjusting voltage of dummy word lineYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 1766US11158380B1Memory device and erasing and verification method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·16 claims
- 1866US7121887B2Electrical connector with shielding shellHON HAI PREC IND CO LTD·Filed 2005·Granted Oct 17, 2006·10 cites·17 claims
- 1964US12354668B2Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 2061US11676646B2Method of reducing program disturbance in memory device and memory device utilizing sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 2160US11205494B2Non-volatile memory device and control methodYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 21, 2021·0 cites·18 claims
- 2258US11721403B2Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·16 claims
- 2348US12505890B2Memories and operation methods thereof, memory systems and electronic devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·17 claims
- 2447US2023238067A1Method of programming and verifying memory device and related memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2545US2024321364A1Operation method of memory device, memory device, memory system, and electronic apparatusYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2645US2025095744A1Memory device, operation method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2738USD519083SElectrical connectorHON HAI PREC IND CO LTD·Filed 2005·Granted Apr 18, 2006·3 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →