Inventor · disambiguated record
Main-Gwo Chen
Also filed as: CHEN MAIN-GWO
11 granted patents·4 pending applications·51 citations·filing 2011–2020
88Inventor score
Files withLIN YUNG-FA12ANPEC ELECTRONICS CORP1CHANGXIN MEMORY TECH INC1UNITED MICROELECTRONICS CORP1
Top patents by PatentIndex Score
15 records- 0190US8748973B2Super junction transistor and fabrication method thereofLIN YUNG-FA·Filed 2012·Granted Jun 10, 2014·9 cites·18 claims
- 0288US8940606B2Method for fabricating trench type power transistor deviceLIN YUNG-FA·Filed 2012·Granted Jan 27, 2015·8 cites·6 claims
- 0388US8541278B2Method for fabricating super-junction power device with reduced miller capacitanceLIN YUNG-FA·Filed 2011·Granted Sep 24, 2013·8 cites·12 claims
- 0486US8466051B2Method for fabricating Schottky deviceLIN YUNG-FA·Filed 2011·Granted Jun 18, 2013·6 cites·7 claims
- 0582US9331161B1Metal gate structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 3, 2016·6 cites·9 claims
- 0681US8404531B2Method for fabricating a power transistorLIN YUNG-FA·Filed 2012·Granted Mar 26, 2013·5 cites·14 claims
- 0780US8178410B1Method for fabricating a semiconductor power deviceLIN YUNG-FA·Filed 2011·Granted May 15, 2012·5 cites·18 claims
- 0877US8524559B2Manufacturing method of power transistor deviceLIN YUNG-FA·Filed 2012·Granted Sep 3, 2013·3 cites·10 claims
- 0963US8357972B2Semiconductor power deviceANPEC ELECTRONICS CORP·Filed 2011·Granted Jan 22, 2013·1 cites·20 claims
- 1058US11462473B2Electrically programmable fuse structure and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 1149US2013043528A1Power transistor device and fabricating method thereofLIN YUNG-FA·Filed 2012·Application pending·0 cites
- 1239US2012199903A1Semiconductor device having a super junctionLIN YUNG-FA·Filed 2012·Application pending·0 cites
- 1338US8890253B2Semiconductor deviceLIN YUNG-FA·Filed 2012·Granted Nov 18, 2014·0 cites·10 claims
- 1437US2012267708A1Termination structure for power devicesLIN YUNG-FA·Filed 2011·Application pending·0 cites
- 1537US2012181576A1Insulated gate bipolar transistorLIN YUNG-FA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →