Inventor · disambiguated record
Satoru Morioka
Also filed as: MORIOKA SATORU
5 granted patents·8 pending applications·9 citations·filing 2007–2019
68Inventor score
Top patents by PatentIndex Score
13 records- 0189US9724896B2Copper heat dissipation material, carrier-attached copper foil, connector, terminal, laminate, shield material, printed-wiring board, metal processed member, electronic device and method for manufacturing the printed wiring boardJX NIPPON MINING & METALS CORP·Filed 2015·Granted Aug 8, 2017·8 cites·21 claims
- 0268US10464291B2Copper heat dissipation material, carrier-attached copper foil, connector, terminal, laminate, shield material, printed-wiring board, metal processed member, electronic device and method for manufacturing the printed wiring boardJX NIPPON MINING & METALS CORP·Filed 2017·Granted Nov 5, 2019·1 cites·24 claims
- 0361US11872647B2Production method of additive manufactured object using pure copper powder having Si coatingJX NIPPON MINING & METALS CORP·Filed 2019·Granted Jan 16, 2024·0 cites·12 claims
- 0450US10194534B2Printed wiring board, electronic device, catheter, and metallic materialJX NIPPON MINING & METALS CORP·Filed 2017·Granted Jan 29, 2019·0 cites·20 claims
- 0547US2016212836A1Surface-Treated Metal Material, Metal Foil With Carrier, Connector, Terminal, Laminate, Shielding Tape, Shielding Material, Printed Wiring Board, Processed Metal Member, Electronic Device, And Method For Manufacturing Printed Wiring BoardJX NIPPON MINING & METALS CORP·Filed 2014·Application pending·0 cites
- 0645US2018035529A1Structure having metal material for heat radiation, printed circuit board, electronic apparatus, and metal material for heat radiationJX NIPPON MINING & METALS CORP·Filed 2017·Application pending·0 cites
- 0738US2017347493A1Structure Having Metal Material For Heat Radiation, Printed Circuit Board, Electronic Apparatus, And Metal Material For Heat RadiationJX NIPPON MINING & METALS CORP·Filed 2017·Application pending·0 cites
- 0833US8137460B2Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystalMORIOKA SATORU·Filed 2007·Granted Mar 20, 2012·0 cites·9 claims
- 0932US2010101486A1Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystalTAKAKUSAKI MISAO·Filed 2008·Application pending·0 cites
- 1029US2011244665A1MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATEMIKAMI MAKOTO·Filed 2011·Application pending·0 cites
- 1125US2012256297A1Method for producing nitride compound semiconductor substrate, and nitride compound semiconductor free-standing substrateMORIOKA SATORU·Filed 2011·Application pending·0 cites
- 1225US2012251428A1Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystalMORIOKA SATORU·Filed 2011·Application pending·0 cites
- 1325US2011215439A1Epitaxial growth substrate, manufacturing method thereof, nitride-based compound semiconductor substrate, and nitride-based compound semiconductor self-supporting substrateMORIOKA SATORU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →