Inventor · disambiguated record
Dae-Hee Weon
Also filed as: WEON DAE-HEE
8 granted patents·2 pending applications·165 citations·filing 2000–2015
88Inventor score
Files withHYNIX SEMICONDUCTOR INC3HYUNDAI ELECTRONICS IND2JUN HWI-CHAN1PURDUE RESEARCH FOUNDATION1SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
10 records- 0190US9589899B2Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structuresJUN HWI-CHAN·Filed 2015·Granted Mar 7, 2017·11 cites·18 claims
- 0290US6544822B2Method for fabricating MOSFET deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Apr 8, 2003·62 cites·10 claims
- 0384US6599803B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 29, 2003·37 cites·6 claims
- 0479US7283029B23-D transformer for high-frequency applicationsPURDUE RESEARCH FOUNDATION·Filed 2005·Granted Oct 16, 2007·10 cites·18 claims
- 0574US6472303B1Method of forming a contact plug for a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Oct 29, 2002·18 cites·16 claims
- 0674US6368925B2Method of forming an EPI-channel in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Apr 9, 2002·20 cites·20 claims
- 0754US6407005B2Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active regionHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 18, 2002·7 cites·13 claims
- 0842USRE45232EMethod of forming a contact plug for a semiconductor deviceWEON DAE HEE·Filed 2012·Granted Nov 4, 2014·0 cites·26 claims
- 0933US2001040292A1Semiconductor device having a contact plug formed by a dual epitaxial layer and method for fabricating the sameFiled 2001·Application pending·0 cites
- 1033US2016049394A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Dae-Hee Weon files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →