Inventor · disambiguated record
Peter Roggwiller
Also filed as: ROGGWILLER PETER
17 granted patents·143 citations·filing 1980–1995
93Inventor score
Top patents by PatentIndex Score
17 records- 0165US4768075APower semiconductor moduleBBC BROWN BOVERI & CIE·Filed 1986·Granted Aug 30, 1988·33 cites·10 claims
- 0250US4642669ASemiconductor device having a blocking capability in only one directionBBC BROWN BOVERI & CIE·Filed 1984·Granted Feb 10, 1987·10 cites·5 claims
- 0348US4961099AHigh-power GTO thyristor and also a method for its manufactureASEA BROWN BOVERI·Filed 1989·Granted Oct 2, 1990·11 cites·5 claims
- 0447US5093693APn-junction with guard ringBBC BROWN BOVERI & CIE·Filed 1991·Granted Mar 3, 1992·22 cites·8 claims
- 0543US4829348ADisconnectable power semiconductor componentBBC BROWN BOVERI & CIE·Filed 1988·Granted May 9, 1989·12 cites·12 claims
- 0640US4801554AProcess for manufacturing a power semiconductor componentBBC BROWN BOVERI & CIE·Filed 1986·Granted Jan 31, 1989·8 cites·2 claims
- 0740US4386283AProcess for the cutting-off of a thyristorBBC BROWN BOVERI & CIE·Filed 1980·Granted May 31, 1983·7 cites·9 claims
- 0839US4743950AThyristor with switchable emitter short circuitBBC BROWN BOVERI & CIE·Filed 1986·Granted May 10, 1988·7 cites·9 claims
- 0937US4910573AGate turn-off thyristor and method of producing sameBBC BROWN BOVERI & CIE·Filed 1988·Granted Mar 20, 1990·5 cites·2 claims
- 1037US4843449AControllable power semiconductorBBC BROWN BOVERI & CIE·Filed 1988·Granted Jun 27, 1989·8 cites·9 claims
- 1136US4596999APower semiconductor component and process for its manufactureBBC BROWN BOVERI & CIE·Filed 1984·Granted Jun 24, 1986·4 cites·4 claims
- 1234US5003368ATurn-off thyristorBBC BROWN BOVERI & CIE·Filed 1988·Granted Mar 26, 1991·5 cites·3 claims
- 1333US4943840AReverse-conducting thyristorBBC BROWN BOVERI & CIE·Filed 1988·Granted Jul 24, 1990·4 cites·7 claims
- 1430US5017992AHigh blocking-capacity semiconductor componentASEA BROWN BOVERI·Filed 1990·Granted May 21, 1991·2 cites·20 claims
- 1529US5081050AMethod of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impuritiesBBC BROWN BOVERI & CIE·Filed 1990·Granted Jan 14, 1992·2 cites·2 claims
- 1629US5057440AManufacturing gate turn-off thyristor having the cathode produced in two diffusion stepsBBC BROWN BOVERI & CIE·Filed 1989·Granted Oct 15, 1991·1 cites·2 claims
- 1728US5587594ASemiconductor component having gate-turn-off thyristor and reduced thermal impairmentABB MANAGEMENT AG·Filed 1995·Granted Dec 24, 1996·2 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →