Inventor · disambiguated record
Maki Shimoda
Also filed as: SHIMODA MAKI
7 granted patents·4 pending applications·125 citations·filing 1995–2006
86Inventor score
Top patents by PatentIndex Score
11 records- 0196US8383396B2Apparatus and method for measuring biological materialHITACHI LTD·Filed 2005·Granted Feb 26, 2013·48 cites·30 claims
- 0278US6770528B2Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrateHITACHI ULSI SYS CO LTD·Filed 2003·Granted Aug 3, 2004·23 cites·9 claims
- 0365US5747387ARemoval method of organic matter and system for the sameHITACHI LTD·Filed 1995·Granted May 5, 1998·34 cites·8 claims
- 0455US6720234B2Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processingHITACHI LTD·Filed 2003·Granted Apr 13, 2004·5 cites·28 claims
- 0550US6562695B1Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processingHITACHI LTD·Filed 1999·Granted May 13, 2003·12 cites·35 claims
- 0649US6444405B1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrateHITACHI LTD·Filed 2000·Granted Sep 3, 2002·3 cites·2 claims
- 0742US7397104B2Semiconductor integrated circuit device and a method of manufacturing the sameELPIDA MEMORY INC·Filed 2004·Granted Jul 8, 2008·0 cites·13 claims
- 0841US2006223170A1Biomolecule detecting apparatus and biomolecule detecting method employing the sameKAMAHORI MASAO·Filed 2006·Application pending·0 cites
- 0940US2004214428A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 1038US2002098678A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateHITACHI LTD·Filed 2002·Application pending·0 cites
- 1126US2001009177A1Systems and methods for two-sided etch of a semiconductor substrateFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →